Two-dimensional violet phosphorus P 11: A Large band gap phosphorus allotrope

G Cicirello, M Wang, QP Sam, JL Hart… - Journal of the American …, 2023 - par.nsf.gov
The discovery of novel large band gap two-dimensional (2D) materials with good stability
and high carrier mobility will innovate the next generation of electronics and optoelectronics …

Factors Controlling Intercalation of Metal Atoms into WS2: Implications for Electronically Tunable Semiconductors

K Zhu, Y Tao, S Mandal, M Chen… - ACS Applied Nano …, 2023 - ACS Publications
The ability to tune the carrier transport properties of semiconducting two-dimensional
materials is critical toward their eventual integration into nanoelectronic devices …

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

H Zheng, B Wu, CT Wang, S Li, J He, Z Liu, JT Wang… - Nano Research, 2023 - Springer
Exploiting the valley degrees of freedom as information carriers provides new opportunities
for the development of valleytronics. Monolayer transition metal dichalcogenides (TMDs) …

Holstein Polarons, Rashba-Like Spin Splitting, and Ising Superconductivity in Electron-Doped MoSe2

SW Jung, MD Watson, S Mukherjee, DV Evtushinsky… - ACS …, 2024 - ACS Publications
Interaction between electrons and phonons in solids is a key effect defining the physical
properties of materials, such as electrical and thermal conductivity. In transition metal …