Recent progress in 2D layered III–VI semiconductors and their heterostructures for optoelectronic device applications

Z Yang, J Hao - Advanced Materials Technologies, 2019 - Wiley Online Library
During the past decade, great effort has been devoted to research on 2D layered materials
due to their reduced thickness and extraordinary physical properties, which open new …

Universal mobility characteristics of graphene originating from charge scattering by ionised impurities

JH Gosling, O Makarovsky, F Wang, ND Cottam… - Communications …, 2021 - nature.com
Pristine graphene and graphene-based heterostructures can exhibit exceptionally high
electron mobility if their surface contains few electron-scattering impurities. Mobility directly …

Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor

Z Qiu, M Trushin, H Fang, I Verzhbitskiy, S Gao… - Science …, 2019 - science.org
Understanding the remarkable excitonic effects and controlling the exciton binding energies
in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in …

Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS2 Self-Powered Photodetector

Y Zhao, J Cho, M Choi, C Ó Coileáin, S Arora… - ACS …, 2022 - ACS Publications
van der Waals heterojunctions with tunable polarity are being actively explored for more
Moore and more-than-Moore device applications, as they can greatly simplify circuit design …

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

Q Lv, F Yan, N Mori, W Zhu, C Hu… - Advanced Functional …, 2020 - Wiley Online Library
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to
realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers …

Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment

Y Yan, S Li, J Du, H Yang, X Wang, X Song… - Advanced …, 2021 - Wiley Online Library
Abstract 2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in
designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the …

Bi2O3/BiVO4@ graphene oxide van der Waals heterostructures with enhanced photocatalytic activity toward oxygen generation

Y Bi, Y Yang, XL Shi, L Feng, X Hou, X Ye… - Journal of Colloid and …, 2021 - Elsevier
The van der Waals (vdW) integration enables to create heterostructures with intimate contact
and bring new opportunities. However, it is not confined to layered materials but can also be …

Quantum Hall phase in graphene engineered by interfacial charge coupling

Y Wang, X Gao, K Yang, P Gu, X Lu, S Zhang… - Nature …, 2022 - nature.com
The quantum Hall effect can be substantially affected by interfacial coupling between the
host two-dimensional electron gases and the substrate, and has been predicted to give rise …

Suppressing ambient degradation of exfoliated InSe nanosheet devices via seeded atomic layer deposition encapsulation

SA Wells, A Henning, JT Gish, VK Sangwan… - Nano …, 2018 - ACS Publications
With exceptional charge carrier mobilities and a direct bandgap at most thicknesses, indium
selenide (InSe) is an emerging layered semiconductor that has generated significant interest …

Graphene quantum Hall effect parallel resistance arrays

AR Panna, IF Hu, M Kruskopf, DK Patel, DG Jarrett… - Physical Review B, 2021 - APS
As first recognized in 2010, epitaxial graphene on SiC (0001) provides a platform for
quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures …