Recent progress in 2D layered III–VI semiconductors and their heterostructures for optoelectronic device applications
During the past decade, great effort has been devoted to research on 2D layered materials
due to their reduced thickness and extraordinary physical properties, which open new …
due to their reduced thickness and extraordinary physical properties, which open new …
Universal mobility characteristics of graphene originating from charge scattering by ionised impurities
Pristine graphene and graphene-based heterostructures can exhibit exceptionally high
electron mobility if their surface contains few electron-scattering impurities. Mobility directly …
electron mobility if their surface contains few electron-scattering impurities. Mobility directly …
Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
Understanding the remarkable excitonic effects and controlling the exciton binding energies
in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in …
in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in …
Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS2 Self-Powered Photodetector
van der Waals heterojunctions with tunable polarity are being actively explored for more
Moore and more-than-Moore device applications, as they can greatly simplify circuit design …
Moore and more-than-Moore device applications, as they can greatly simplify circuit design …
Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors
Q Lv, F Yan, N Mori, W Zhu, C Hu… - Advanced Functional …, 2020 - Wiley Online Library
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to
realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers …
realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers …
Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment
Y Yan, S Li, J Du, H Yang, X Wang, X Song… - Advanced …, 2021 - Wiley Online Library
Abstract 2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in
designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the …
designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the …
Bi2O3/BiVO4@ graphene oxide van der Waals heterostructures with enhanced photocatalytic activity toward oxygen generation
The van der Waals (vdW) integration enables to create heterostructures with intimate contact
and bring new opportunities. However, it is not confined to layered materials but can also be …
and bring new opportunities. However, it is not confined to layered materials but can also be …
Quantum Hall phase in graphene engineered by interfacial charge coupling
The quantum Hall effect can be substantially affected by interfacial coupling between the
host two-dimensional electron gases and the substrate, and has been predicted to give rise …
host two-dimensional electron gases and the substrate, and has been predicted to give rise …
Suppressing ambient degradation of exfoliated InSe nanosheet devices via seeded atomic layer deposition encapsulation
With exceptional charge carrier mobilities and a direct bandgap at most thicknesses, indium
selenide (InSe) is an emerging layered semiconductor that has generated significant interest …
selenide (InSe) is an emerging layered semiconductor that has generated significant interest …
Graphene quantum Hall effect parallel resistance arrays
As first recognized in 2010, epitaxial graphene on SiC (0001) provides a platform for
quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures …
quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures …