Recent studies of SiGeSn materials and optoelectronic devices hold great promise for
photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and …

In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-
quantum-well structures were demonstrated. Lasing performance was investigated via two 4 …

A SiGeSn/GeSn/SiGeSn single quantum well structure featuring type-I band alignment was
comprehensively characterized. Three pump lasers with different penetration depths and …

Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well (MQW)
photoconductors (PCs) on silicon substrate were investigated. The high quality GeSn/Ge …

This paper reports the comprehensive characterization of a Ge 0.92 Sn 0.08/Ge 0.86 Sn
0.14/Ge 0.92 Sn 0.08 single quantum well. By using a strain relaxed Ge 0.92 Sn 0.08 buffer …

The GeSn-based quantum wells (QWs) have been investigated recently for the development
of efficient GeSn emitters. Although our previous study indicated that the direct bandgap well …

We investigate the effects of the low-temperature (LT) GeSn buffer layers on Sn surface
segregation during the growth of the additional GeSn layers. Sn surface segregation was …

In this paper, a high-quality sputtered-GeSn layer on Ge (100) with a Sn composition up to
7% was demonstrated. The crystallinity of the GeSn layer was investigated via high …

Abstract Lattice-matched Ge/GeSiSn layers were formed on Ge substrates by sputter
epitaxy, and the effects of the thicknesses of the Ge and GeSiSn layers on crystallinity of the …

Ge_0. 998Pb_0. 002 photodetectors (PDs) with a GePb layer grown on n-type Ge (100)
substrate by magnetron sputtering epitaxy were fabricated by complementary metal-oxide …