Progress in infrared photodetectors since 2000

C Downs, TE Vandervelde - Sensors, 2013 - mdpi.com
The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …

Mid-wave and long-wave infrared transmitters and detectors for optical satellite communications—a review

L Flannigan, L Yoell, C Xu - Journal of Optics, 2022 - iopscience.iop.org
There has been a recent surge in interest for optical satellite communication (SatCom)
utilizing lasers. It is clear to see why, as optical SatCom is capable of higher speed, lighter …

Emerging type‐II superlattices of InAs/InAsSb and InAs/GaSb for mid‐wavelength infrared photodetectors

DO Alshahrani, M Kesaria, EA Anyebe… - Advanced photonics …, 2022 - Wiley Online Library
Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

Ultrasensitive mid-wavelength infrared photodetection based on a single InAs nanowire

X Zhang, H Huang, X Yao, Z Li, C Zhou, X Zhang… - ACS …, 2019 - ACS Publications
One-dimensional InAs nanowire (NW)-based photodetectors have been widely studied due
to their potential application in mid-wavelength infrared (MWIR) photon detection. However …

[BOOK][B] CRC concise encyclopedia of nanotechnology

BI Kharisov, OV Kharissova, U Ortiz-Mendez - 2016 - books.google.com
The book examines the design, application, and utilization of devices, techniques, and
technologies critical to research at the atomic, molecular, and macromolecular levels …

Mid-wave infrared optical receiver based on an InAsSb-nBn photodetector using the barrier do** engineering technique for low-power satellite optical wireless …

M Shaveisi, P Aliparast - Applied Optics, 2023 - opg.optica.org
This paper proposes a new nBn photodetector (nBn-PD) based on InAsSb with a barrier
do** engineering technique [core–shell doped barrier (CSD-B) nBn-PD] for utilization as a …

[HTML][HTML] Mid-infrared InAs0. 79Sb0. 21-based nBn photodetectors with Al0. 9Ga0. 2As0. 1Sb0. 9 barrier layers, and comparisons with InAs0. 87Sb0. 13 pin diodes …

AP Craig, ARJ Marshall, ZB Tian, S Krishna… - Applied Physics …, 2013 - pubs.aip.org
InAs 0.79 Sb 0.21-based nBn photodetectors were fabricated on a GaAs substrate, using the
interfacial misfit array growth mode. Reductions in the dark current density of more than two …

Thermal properties of mid-infrared colloidal quantum dot detectors

E Lhuillier, S Keuleyan, P Rekemeyer… - Journal of Applied …, 2011 - pubs.aip.org
HgTe colloidal quantum dot films are studied for photodetection over the 3–5 μm
atmospheric transparency window. The temperature dependence of the conductivity …

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

BC Juang, RB Laghumavarapu, BJ Foggo… - Applied Physics …, 2015 - pubs.aip.org
There exists a long-term need for foreign substrates on which to grow GaSb-based
optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb …

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

C Jia, G Deng, L Liu, P Zhao, G Song… - Journal of Physics D …, 2023 - iopscience.iop.org
Reduction in the size, weight, and power (SWaP) consumption of an infrared (IR) detection
system is one of the critical challenges lying ahead for the development of IR detector …