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Transition from Metal-Rich to N-Rich Growth for Core–Shell InGaN Nanowires on Si (111) at the Onset of In Desorption
R Deng, X Pan, H Hong, G Yang, X Pu… - Crystal Growth & …, 2023 - ACS Publications
The growth of InGaN on Si in the regime slightly above the onset of In desorption naturally
leads to the formation of core–shell InGaN nanowires (NWs) by plasma-assisted molecular …
leads to the formation of core–shell InGaN nanowires (NWs) by plasma-assisted molecular …
Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
J Däubler, T Passow, R Aidam, K Köhler… - Applied Physics …, 2014 - pubs.aip.org
Metamorphic (ie, linear composition graded) GaInN buffer layers with an increased in-plane
lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as …
lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as …
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range
The authors report compact and chemically homogeneous In-rich InGaN layers directly
grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical …
grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical …
Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation
Nitride alloys are considered potential candidates as photoelectrodes for
photoelectrochemical water splitting. Here we show an In0. 25Ga0. 75N layer activated by …
photoelectrochemical water splitting. Here we show an In0. 25Ga0. 75N layer activated by …
Molecular beam epitaxy of thick InGaN (0001) films: Effects of substrate temperature on structural and electronic properties
Indium gallium nitride films with compositions close to the middle of the miscibility gap and
thickness approximately up to 0.5 μm were epitaxially grown on GaN (0001) by plasma …
thickness approximately up to 0.5 μm were epitaxially grown on GaN (0001) by plasma …
Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias
nn isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted
molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray …
molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray …
Uniform low-to-high in composition InGaN layers grown on Si
Uniform, compact, and thick InGaN layers are grown on Si (111) substrates by plasma-
assisted molecular beam epitaxy without any buffer layers at low temperatures of around …
assisted molecular beam epitaxy without any buffer layers at low temperatures of around …
Droplet controlled growth dynamics in molecular beam epitaxy of nitride semiconductors
The growth dynamics of Ga (In) N semiconductors by Plasma-Assisted Molecular Beam
Epitaxy (PAMBE) at low temperatures (T= 450° C) is here investigated. The presence of …
Epitaxy (PAMBE) at low temperatures (T= 450° C) is here investigated. The presence of …
Electrochemical detection of trace arsenic (III) by functionalized In0. 38Ga0. 62N/Si (1 1 1) electrode
We report here the electro-analytical potential of directly grown epitaxial In 0.38 Ga 0.62 N/Si
(1 1 1) using cyclic voltammetry and impedance spectroscopy. Current characteristic of In …
(1 1 1) using cyclic voltammetry and impedance spectroscopy. Current characteristic of In …
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si (111)
The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-
content In 0.73 Ga 0.27 N layer, directly on a Si (111) substrate by plasma-assisted …
content In 0.73 Ga 0.27 N layer, directly on a Si (111) substrate by plasma-assisted …