Bias temperature instability of mosfets: Physical processes, models, and prediction
CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …
key issue. To optimize chip design, trade-offs between reliability, speed, power …
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
Negative bias temperature instabilities (NBTI) received little attention pre-2000, but have
been intensively investigated post-2000, as they become limiting device lifetime. The …
been intensively investigated post-2000, as they become limiting device lifetime. The …
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
Positive charges (PCs) in gate dielectric shift the threshold voltage and cause a time-
dependent device variability. To assess their impact on circuits, it is useful to know their …
dependent device variability. To assess their impact on circuits, it is useful to know their …
NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement
Predicting negative bias temperature instability (NBTI) lifetime can be dangerous since it is
difficult to assess its safety margin. The common technique uses gate bias V g acceleration …
difficult to assess its safety margin. The common technique uses gate bias V g acceleration …
Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect
A Hf-based dielectric has been selected to replace SiON for CMOS technologies. When
compared with SiON, Hf dielectrics can suffer from higher instability. Previous attentions …
compared with SiON, Hf dielectrics can suffer from higher instability. Previous attentions …
An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques
Negative bias temperature instability (NBTI) is limiting the lifetime of pMOSFETs, and it is
often monitored by the shift of threshold voltage DeltaV t. Different techniques have been …
often monitored by the shift of threshold voltage DeltaV t. Different techniques have been …
Applications of DCIV method to NBTI characterization
The DCIV method was applied to investigate negative bias temperature instability (NBTI) in
SiO2 gate oxides. The DCIV technique, which measures the interface defect density …
SiO2 gate oxides. The DCIV technique, which measures the interface defect density …
Defects and instabilities in Hf-dielectric/SiON stacks
In this work, a review on the recent progress in understanding defects and instabilities in Hf-
dielectric/SiON stacks will be given for both nMOSFETs and pMOSFETs. The key issues …
dielectric/SiON stacks will be given for both nMOSFETs and pMOSFETs. The key issues …
Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs
Reliability issues of MOSFETs such as bias temperature instability (BTI), random telegraph
noise (RTN), and stress-induced leakage current (SILC), are linked to the trap** of …
noise (RTN), and stress-induced leakage current (SILC), are linked to the trap** of …
Defect loss: A new concept for reliability of MOSFETs
Defect generation limits device lifetime and enhances its variability. Previous works mainly
addressed the generation kinetics and process. The current understanding is that the …
addressed the generation kinetics and process. The current understanding is that the …