Progress in quantum-dot single photon sources for quantum information technologies: A broad spectrum overview

Y Arakawa, MJ Holmes - Applied Physics Reviews, 2020 - pubs.aip.org
Semiconductor quantum dots (QDs) of various material systems are being heavily
researched for the development of solid state single photon emitters, which are required for …

Bottom‐Up Formation of III‐Nitride Nanowires: Past, Present, and Future for Photonic Devices

J Min, Y Wang, TY Park, D Wang, B Janjua… - Advanced …, 2024 - Wiley Online Library
The realization of semiconductor heterostructures marks a significant advancement beyond
silicon technology, driving progress in high‐performance optoelectronics and photonics …

Toward bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon

S Tamariz, G Callsen, J Stachurski, K Shojiki… - Acs …, 2020 - ACS Publications
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon
emission at noncryogenic temperatures due to their large exciton binding energies. Here …

Enhanced single-photon emission from GaN quantum dots in bullseye structures

S **a, T Aoki, K Gao, M Arita, Y Arakawa… - ACS …, 2021 - ACS Publications
We present the design, fabrication, and detailed characterization of a photonic bullseye
structure to enhance the single-photon extraction efficiency from self-assembled GaN/AlN …

Perspective on Solid‐State Single‐Photon Sources in the Infrared for Quantum Technology

S Castelletto, A Boretti - Advanced Quantum Technologies, 2023 - Wiley Online Library
Solid‐state single‐photon sources in the infrared region are crucial for advancing quantum
technologies, in particular long‐distance fiber or on‐chip quantum communication, quantum …

III-nitride quantum dots as single photon emitters

MJ Holmes, M Arita, Y Arakawa - Semiconductor Science and …, 2019 - iopscience.iop.org
III-nitride quantum dots are proving to be promising for application to single photon emitting
devices. Research around the globe is revealing several interesting properties of these …

Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth

X Sun, P Wang, B Sheng, T Wang, Z Chen… - Quantum …, 2019 - Wiley Online Library
We demonstrate high‐purity single‐photon emission from a high‐quality and further
confined InGaN (indium gallium nitride) quantum disc in a GaN (gallium nitride) nanowire …

Ultrafast carrier dynamics of conformally grown semi-polar (112 [combining macron] 2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core …

MA Johar, HG Song, A Waseem, JH Kang, JS Ha… - Nanoscale, 2019 - pubs.rsc.org
The growth of semi-polar (112) GaN/InGaN multiple-quantum-well (MQW) co-axial
heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD …

Ultrafast green single photon emission from an InGaN quantum dot-in-a-GaN nanowire at room temperature

S Bhunia, A Majumder, S Chatterjee, R Sarkar… - Applied Physics …, 2024 - pubs.aip.org
Single photon emitters, preferably working at room temperature, are crucial components of a
diverse set of quantum technologies. Nanowire-supported quantum dots (NWQDs) of InGaN …

Gallium Nitride Nanomaterials and Color Centers for Quantum Technologies

S Castelletto, A Boretti - ACS Applied Nano Materials, 2024 - ACS Publications
Gallium nitride (GaN) is an advanced semiconductor primarily known for its current
applications in lasers and high-power electronics. With the availability of various growth …