Efficiency models for GaN-based light-emitting diodes: Status and challenges
J Piprek - Materials, 2020 - mdpi.com
Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …
various applications in lighting, displays, biotechnology, and other fields. However, their …
A review on experimental measurements for understanding efficiency droop in InGaN-based light-emitting diodes
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current
density perplexes the development of high-power solid-state lighting. Although the relevant …
density perplexes the development of high-power solid-state lighting. Although the relevant …
How to decide between competing efficiency droop models for GaN-based light-emitting diodes
J Piprek - Applied Physics Letters, 2015 - pubs.aip.org
GaN-based light-emitting diodes (LEDs) exhibit a strong efficiency droop with higher current
injection, which has been mainly attributed to Auger recombination and electron leakage …
injection, which has been mainly attributed to Auger recombination and electron leakage …
[BOOK][B] Handbook of GaN semiconductor materials and devices
This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
VENUS: A vertical-cavity surface-emitting laser electro-opto-thermal numerical simulator
The properties of vertical-cavity surface-emitting lasers (VCSELs) are investigated by means
of a multiphysical Vcsel Electro-opto-thermal NUmerical Simulator (VENUS). VENUS …
of a multiphysical Vcsel Electro-opto-thermal NUmerical Simulator (VENUS). VENUS …
Electron Transport Properties of Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations
High-electron-mobility transistors (HEMTs) based on Al x Ga 1− x N/Ga N heterostructures
have great potential for applications in power electronics and radio frequency applications …
have great potential for applications in power electronics and radio frequency applications …
Modification of internal quantum efficiency and efficiency droop in GaN-based flip-chip light-emitting diodes via the Purcell effect
HY Ryu - Optics Express, 2015 - opg.optica.org
The Purcell effect in GaN-based flip-chip (FC) light-emitting diode (LED) structures is
investigated numerically using finite-difference time-domain simulations. Depending on the …
investigated numerically using finite-difference time-domain simulations. Depending on the …
Hybrid AI-thermal model trained via Monte Carlo simulations to study self-heating effects
This article presents a hybrid artificial intelligence (AI)-thermal model for the determination of
the current and lattice temperature of a device under a given bias voltage. The model is …
the current and lattice temperature of a device under a given bias voltage. The model is …
Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and …
An investigation into self-switching diodes based on highly doped GaN is conducted under
direct current (dc) bias conditions. Different device geometries are explored under various …
direct current (dc) bias conditions. Different device geometries are explored under various …
Non equilibrium Green's function quantum transport for green multi-quantum well nitride light emitting diodes
A Shedbalkar, B Witzigmann - Optical and Quantum Electronics, 2018 - Springer
This work presents a non-equilibrium Green's function (NEGF) based simulation of a green
nitride multi-quantum well light emitting diode (LED). A carrier–carrier scattering model …
nitride multi-quantum well light emitting diode (LED). A carrier–carrier scattering model …