N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
CS Gallinat, G Koblmüller, JS Brown… - Journal of Applied …, 2007 - pubs.aip.org
We investigated the role of temperature and In∕ N flux ratios to determine suitable growth
windows for the plasma-assisted molecular beam epitaxy of In-face (0001) InN. Under …
windows for the plasma-assisted molecular beam epitaxy of In-face (0001) InN. Under …
High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy
A boundary-temperature-controlled epitaxy, where the growth temperature of InN is
controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire …
controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire …
Understanding and controlling indium incorporation and surface segregation on InGaN surfaces: An ab initio approach
The incorporation of In into the technologically relevant (0001)(Ga-polar) and (000 1¯)(N-
polar) surfaces of In 0.25 Ga 0.75 N is investigated using density functional theory. The …
polar) surfaces of In 0.25 Ga 0.75 N is investigated using density functional theory. The …
Molecular beam epitaxy of N-polar InGaN
We report on the growth of N-polar In x Ga 1− x N by N 2 plasma-assisted molecular beam
epitaxy. Ga-polar and N-polar InGaN films were grown at different growth temperatures and …
epitaxy. Ga-polar and N-polar InGaN films were grown at different growth temperatures and …
Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy
The role of thermal instability and In surface coverages on the growth kinetics has been
investigated for N-face InN films grown by plasma-assisted molecular beam epitaxy. Film …
investigated for N-face InN films grown by plasma-assisted molecular beam epitaxy. Film …
Sources of unintentional conductivity in InN
Using first-principles methods, we investigate the effects of monatomic hydrogen in InN. We
find that hydrogen can occupy interstitial and substitutional sites. Interstitial hydrogen is …
find that hydrogen can occupy interstitial and substitutional sites. Interstitial hydrogen is …
Evaluation of threading dislocation densities in In-and N-face InN
CS Gallinat, G Koblmüller, F Wu… - Journal of Applied Physics, 2010 - pubs.aip.org
The threading dislocation (TD) structure and density has been studied in In-and N-face InN
films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were …
films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were …