Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
The effect of GaN epilayer thickness on the near-junction thermal resistance of GaN-on-diamond devices
Gallium nitride (GaN) heteroepitaxially integrated with diamond (GaN-on-diamond) is
promising for high-power electronics due to the excellent heat spreading capability of …
promising for high-power electronics due to the excellent heat spreading capability of …
Performance analysis of AlGaN/GaN HEMT for RF and microwave nanoelectronics applications
In recent days, wide bandgap semiconductor materials constructed with GaN are exhibiting
incredible performances in develo** devices that are handling applications like high …
incredible performances in develo** devices that are handling applications like high …
High electron mobility transistors: performance analysis, research trend and applications
In recent years, high electron mobility transistors (HEMTs) have received extensive atten-
tion for their superior electron transport ensuring high speed and high power applications …
tion for their superior electron transport ensuring high speed and high power applications …
Guidelines for reduced-order thermal modeling of multifinger GaN HEMTs
R Pearson, B Chatterjee, S Kim… - Journal of …, 2020 - asmedigitalcollection.asme.org
The increasing demand for tightly integrated gallium nitride high electron mobility transistors
(HEMT) into electronics systems requires accurate thermal evaluation. While these devices …
(HEMT) into electronics systems requires accurate thermal evaluation. While these devices …
Transient thermal dynamics of GaN HEMTs
KR Bagnall, EN Wang - 2016 15th IEEE Intersociety …, 2016 - ieeexplore.ieee.org
Although GaN high electron mobility transistors (HEMTs) are one of the most promising
semiconductor technologies for high power and high frequency applications, high device …
semiconductor technologies for high power and high frequency applications, high device …
A roadmap for building thermal models for AlGaN/GaN HEMTs: Simplifications and beyond
M Azarifar, N Donmezer - Heat transfer …, 2016 - asmedigitalcollection.asme.org
AlGaN/GaN based high electron mobility transistors (HEMTs) have been intensively used
due to their high-efficiency power switching and large current handling capabilities …
due to their high-efficiency power switching and large current handling capabilities …
Surface structure enhanced microchannel flow boiling of low surface tension fluids
J Sircar - 2021 - dspace.mit.edu
Microchannel flow boiling can meet the thermal management requirements of high power
and high frequency integrated circuits, but the technology has been limited by the …
and high frequency integrated circuits, but the technology has been limited by the …
Performance Analysis of AlGaN/GaN
In recent days, wide bandgap semiconductor materials constructed with GaN are exhibiting
incredible performances in develo** devices that are handling applications like high …
incredible performances in develo** devices that are handling applications like high …
Cooling of power electronics by integrating sintered Cu particle wick onto a direct-bond copper substrate
W Puckett, K Agbim, S Graham - 2017 16th IEEE Intersociety …, 2017 - ieeexplore.ieee.org
Power electronics devices can be limited in operation, and lifetime by the ability to remove
heat and maintain low junction temperatures. A common architecture for power electronics …
heat and maintain low junction temperatures. A common architecture for power electronics …
Transistor GaN sur Si 200mm compatible CMOS pour l'amplification de puissance en bande Ka: optimisation de l'empilement de grille
A Chanuel - 2022 - theses.hal.science
La brique de grille des transistors GaN nécessite un dimensionnement plus compact avec
une longueur plus courte (Lg~ 150 nm) et une barrière plus fine (< 10 nm) pour le …
une longueur plus courte (Lg~ 150 nm) et une barrière plus fine (< 10 nm) pour le …