Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for
next generation information storage, leading to great performance and fabrication-friendly …

HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

Flexible memory is highly desirable for data storage in portable wearable electronics. Here,
a flexible bilayer TiO2/HfO2‐architecture‐based resistive random access memory (RRAM) is …

The present study reports a memory structure Al/V2O5/NiMnIn on a flexible stainless steel
(SS) substrate for neuromorphic applications. The fabricated device exhibits gradual SET …

HfO2‐based memristors that remembers the history of the current that has passed through
them have attracted great interest for use as artificial synapses in neuromorphic systems …

In this Letter, the mechanism of double forming process phenomenon revealing in ZrO 2/HfO
2 bilayer resistive random access memory structure is investigated. This phenomenon …

Emerging nanoscale devices, including memristors, have been extensively studied to
implement biological synaptic functions such as learning and plasticity, which are the …

In this letter, the dynamic evolution of TiN/HfO 2/Pt device from bipolar resistive switching
(BRS) to complementary resistive switching (CRS) was reported. The device exhibits the …

The comparison of resistive switching (RS) storage in the same device architecture is
explored for atomic layer deposition (ALD) Al2O3, HfO2 and HfAlOx‐based resistive random …

In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the
conduction mechanism and degradation characteristics of memristors with different …