Spintronic and nanomagnetic devices often derive their functionality from layers of different
materials and the interfaces between them. We discuss the opportunities that arise from …

The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …

Whereas ferromagnets have been known and used for millennia, antiferromagnets were
only discovered in the 1930s. At large scale, because of the absence of global …

Modulation of electronic properties in spintronic interfaces (spinterfaces) can give rise to the
optimization and even emergence of abundant spintronic effects. However, a proof-of …

It has long been expected that the coexistence of ferroelectric and ferrovalley polarizations
in one magnetic semiconductor could offer the possibility to revolutionize electronic devices …

The fully electrical control of the magnetic states in magnetic tunnel junctions is highly
pursued for the development of the next generation of low-power and high-density …

The magnetoelectric effect is technologically appealing because of its ability to manipulate
magnetism using an electric field rather than magnetic field or current, thus providing a …

Placing a suitable spacer layer between two magnetic layers can lead to an interaction
between the magnetic layers known as Ruderman–Kittel–Kasuya–Yosida (RKKY) coupling …

The electronic structure of constituent layers and the spin channel of propagating electrons
are critical factors that affect the magnitude and sign of magnetoresistance (MR) in synthetic …

Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields
have extensive applications in energy-efficient memory and logic devices. Voltage …