A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits
since the internal gain of photocurrent enables high responsivity. However, state-of-the-art …

Dark current degradation due to 49.7 MeV proton irradiation is studied on lattice-matched
indium gallium arsenide (InGaAs) pin photodiodes. This degradation is described in terms of …

Observation of robust hot carrier effects in quantum-well structures has prompted hopes to
increase the efficiency of solar cells beyond the Shockley–Queisser limit (33% for single …

The viability of epitaxial regrowth of InP to passivate lateral mesa surfaces of lattice-matched
InGaAs/InP photodiodes is investigated. The effect of the passivation is quantified via a …

A model for tunneling between conduction and valence band tail states in semiconductors is
developed. Localized, lifetime-broadened wave functions originally proposed by Vinogradov …

The minority carrier lifetimes in InGaAs ternary alloys are investigated both experimentally
and theoretically. Two groups of InGaAs/InP photodetector samples are designed for …

Numerical simulation of the electric field distribution and photocurrent response of a planar
InP/InGaAs avalanche photodiode is presented for small variations of the multiplication …

InGaAs/InP double-heterostructure P–i–N diodes of various junction areas are characterized
at room temperature and modeled using TCAD. Biasing the guard ring allows one to …

InGaAs photocathode commonly relies on the buffer layer to mitigate the lattice mismatch
between the InGaAs emission layer and the substrate layer and thus enhance the …

The relationship between the threading dislocation density (TDD), the generation (τ g) and
recombination lifetime (τ r) in relaxed n-type In. 53 Ga. 47 As is investigated for a series of p+ …