Undoped strained Ge quantum well with ultrahigh mobility of two million
Z Kong, Z Li, G Cao, J Su, Y Zhang, J Liu… - … Applied Materials & …, 2023 - ACS Publications
We develop a method to fabricate an undoped Ge quantum well (QW) under a 32 nm
relaxed Si0. 2Ge0. 8 shallow barrier. The bottom barrier contains Si0. 2Ge0. 8 (650° C) and …
relaxed Si0. 2Ge0. 8 shallow barrier. The bottom barrier contains Si0. 2Ge0. 8 (650° C) and …
Quantum dot source-drain transport response at microwave frequencies
Quantum dots are frequently used as charge-sensitive devices in low-temperature
experiments to probe electric charge in mesoscopic conductors where the current running …
experiments to probe electric charge in mesoscopic conductors where the current running …
Micro-scale photon source in a hybrid cQED system
MB Chen, BC Wang, SS Gu, T Lin, HO Li… - Chinese …, 2021 - iopscience.iop.org
Coherent photon source is an important element that has been widely used in spectroscopy,
imaging, detection, and teleportation in quantum optics. However, it is still a challenge to …
imaging, detection, and teleportation in quantum optics. However, it is still a challenge to …
Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition
Z Kong, Z Li, G Cao, J Su, Y Zhang, J Liu, J Liu… - arxiv preprint arxiv …, 2022 - arxiv.org
We fabricate an undoped Ge quantum well under 30 nm Ge0. 8Si0. 2 shallow barrier with
reverse grading technology. The under barrier is deposited by Ge0. 8Si0. 2 followed by Ge0 …
reverse grading technology. The under barrier is deposited by Ge0. 8Si0. 2 followed by Ge0 …