Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

We reviewed studies reporting the applications of the Tauc–Lorentz (TL) parameterization
for the complex dielectric function in spectroscopic ellipsometry. Since this model became …

Metal‐insulator‐insulator‐metal diodes based on nitrogen‐doped titanium dioxide (NTiOx)
and aluminum oxide (NAlOx) are fabricated and characterized for the first time. Pt/TiOx …

Transparent conducting oxides are electrically conductive materials with high optical
transmittance in the visible region of the spectrum and are useful in a wide range of …

We present measurements and a model of aluminum oxidation induced by ultraviolet (UV)
radiation. Spots of oxide were grown by focusing synchrotron radiation onto a polycrystalline …

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy
have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics …

We present numerical results from atomistic simulations of Cu in SiO 2 and Al 2 O 3, with an
emphasis on the thermodynamic, kinetic, and electronic properties. The calculated …

Recently, Al 2 O 3 has been demonstrated to be an effective material type for perovskite
photoelectric device performance improvement. It is therefore essential to investigate the …

Digital electronics power consumption evolved into a major concern: at the current pace,
general-purpose computing energy consumption will exceed global energy production …

Band offsets of the semiconductor/Insulator interfaces are utilized to determine charged
deep level defects density in doped single and compound semiconductors. This method is …