After decades of advancement, optoelectronic technology has emerged as a pivotal player
in various domains such as optical communication, optical interconnection, and optical …

By modifying Germanium (Ge) material, direct bandgap emission can be achieved,
improving light emission efficiency. This paper proposes a strain-engineered GeSn laser …

Modifying germanium to achieve efficient light emission holds great potential in the field of
silicon-based light sources. We propose a method of introducing stress by repeatedly …

Integrated circuit technology has undergone significant advancements and progress over
the past few decades. However, as the demand to further shrink circuit sizes increases …

Ge has become a promising material for Si-based optoelectronic integrated circuits (OEIC)
due to its pseudo-direct bandgap. In this paper we achieved tensilely strained Ge free …

Based on the difference of thermal expansion coefficient between Si and Ge, low-intensity
tensile stress can be introduced into Ge epitaxial layer on Si substrate. S-Ge/Si …

The rapid development of multi/manycore technologies offers the opportunity for highly
parallel architectures implemented on a single chip. While the first, low parallelism multicore …