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[HTML][HTML] On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
[HTML][HTML] Parameter extraction techniques for the analysis and modeling of resistive memories
A revision of the different numerical techniques employed to extract resistive switching (RS)
and modeling parameters is presented. The set and reset voltages, commonly used for …
and modeling parameters is presented. The set and reset voltages, commonly used for …
[HTML][HTML] Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode
Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory
(RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent …
(RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent …
In situ observation of low‐power nano‐synaptic response in graphene oxide using conductive atomic force microscopy
Multiple studies have reported the observation of electro‐synaptic response in different
metal/insulator/metal devices. However, most of them analyzed large (> 1 µm2) devices that …
metal/insulator/metal devices. However, most of them analyzed large (> 1 µm2) devices that …
Enhanced resistive switching performance of hafnium oxide-based devices: Effects of growth and annealing temperatures
Although hafnium oxide-based resistive switching (RS) devices have been explored
extensively, extremely high operating voltages and currents hinder their application in low …
extensively, extremely high operating voltages and currents hinder their application in low …
Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
The relevance of the intrinsic series resistance effect in the context of resistive random
access memory (RRAM) compact modeling is investigated. This resistance notably affects …
access memory (RRAM) compact modeling is investigated. This resistance notably affects …
Temperature of conductive nanofilaments in hexagonal boron nitride based memristors showing threshold resistive switching
Two‐terminal metal/insulator/metal (MIM) memristors exhibiting threshold resistive switching
(RS) can develop advanced key tasks in solid‐state nano/micro‐electronic circuits, such as …
(RS) can develop advanced key tasks in solid‐state nano/micro‐electronic circuits, such as …
Layer‐engineered functional multilayer thin‐film structures and interfaces through atomic and molecular layer deposition
Atomic layer deposition (ALD) technology is one of the cornerstones of the modern
microelectronics industry, where it is exploited in the fabrication of high‐quality inorganic …
microelectronics industry, where it is exploited in the fabrication of high‐quality inorganic …
Volatile tin oxide memristor for neuromorphic computing
The rise of neuromorphic systems has addressed the shortcomings of current computing
architectures, especially regarding energy efficiency and scalability. These systems use …
architectures, especially regarding energy efficiency and scalability. These systems use …
[HTML][HTML] An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
An in-depth simulation and experimental study has been performed to analyze thermal
effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that …
effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that …