MOS transistor modeling for RF IC design
C Enz, Y Cheng - IEEE Journal of Solid-State Circuits, 2000 - ieeexplore.ieee.org
This paper presents the basis of the modeling of the MOS transistor for circuit simulation at
RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first …
RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first …
MOSFET modeling for RF IC design
High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC)
design is discussed. Modeling of the intrinsic device and the extrinsic components is …
design is discussed. Modeling of the intrinsic device and the extrinsic components is …
Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements
An extraction method to obtain the induced gate noise (i~/sub g/~/sup 2/~) channel noise
(i~/sub d/~/sup 2/~), and their cross correlation (i~/sub g/~ i~/sub d/~*~) in submicron …
(i~/sub d/~/sup 2/~), and their cross correlation (i~/sub g/~ i~/sub d/~*~) in submicron …
[LIBRO][B] Modeling nanowire and double-gate junctionless field-effect transistors
F Jazaeri, JM Sallese - 2018 - books.google.com
The first book on the topic, this is a comprehensive introduction to the modeling and design
of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages …
of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages …
High-frequency noise of modern MOSFETs: Compact modeling and measurement issues
Compact modeling of the most important high-frequency (HF) noise sources of the MOSFET
is presented in this paper, along with challenges in noise measurement and deembedding …
is presented in this paper, along with challenges in noise measurement and deembedding …
High-frequency small signal AC and noise modeling of MOSFETs for RF IC design
Y Cheng, CH Chen, M Matloubian… - IEEE Transactions on …, 2002 - ieeexplore.ieee.org
High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF)
integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects …
integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects …
[LIBRO][B] Specular gloss
R Silvennoinen, KE Peiponen, K Myller - 2010 - books.google.com
The aesthetic appearance of various objects is important to human beings. One measure of
the quality of an object is its surface quality, which can be characterized with the concept of …
the quality of an object is its surface quality, which can be characterized with the concept of …
Low-noise amplifier design for ultrawideband radio
J Lerdworatawee, W Namgoong - IEEE Transactions on …, 2004 - ieeexplore.ieee.org
A new theoretical approach for designing a low-noise amplifier (LNA) for the ultra-wideband
(UWB) radio is presented. Unlike narrow-band systems, the use of the noise figure (NF) …
(UWB) radio is presented. Unlike narrow-band systems, the use of the noise figure (NF) …
MOSFET modeling for low noise, RF circuit design
In this paper, high frequency (HF) AC and noise modeling of MOSFETs for low noise, radio
frequency (RF) integrated circuit (IC) design are discussed. Scalable parasitic model and the …
frequency (RF) integrated circuit (IC) design are discussed. Scalable parasitic model and the …
Modeling of thermal noise in short-channel MOSFETs at saturation
CH Park, YJ Park - Solid-State Electronics, 2000 - Elsevier
An analytical formula of excessive thermal noise in short-channel MOSFETs at saturation is
developed following the approach used for GaAs JFET or MESFET by Statz, Haus, and …
developed following the approach used for GaAs JFET or MESFET by Statz, Haus, and …