Defect‐Induced Magnetism in Nonmagnetic Oxides: Basic Principles, Experimental Evidence, and Possible Devices with ZnO and TiO2
The magnetic moment and the magnetic order induced by localized defects, like vacancies,
interstitials, and/or nonmagnetic (NM) ions, in a NM oxide atomic lattice are discussed …
interstitials, and/or nonmagnetic (NM) ions, in a NM oxide atomic lattice are discussed …
ZnO oxygen vacancies formation and filling followed by in situ photoluminescence and in situ EPR
C Drouilly, JM Krafft, F Averseng, S Casale… - The Journal of …, 2012 - ACS Publications
Oxygen vacancies of zinc oxide were followed by photoluminescence (PL) and electron
paramagnetic resonance (EPR) spectroscopies. The green PL emission was associated …
paramagnetic resonance (EPR) spectroscopies. The green PL emission was associated …
[HTML][HTML] Piezotronically tuned photosensitivity in ZnO varistor-type interface devices
A Sayyadi-Shahraki, T Frömling - Nano Energy, 2024 - Elsevier
The study of piezotronic and piezo-phototronic features in semiconducting piezoelectrics
has gained considerable attention for optimizing electronic and optoelectronic device …
has gained considerable attention for optimizing electronic and optoelectronic device …
Advances in graphene/molybdenum dichalcogenide-based van der Waals heterostructure photodetectors
Graphene is widely used in photodetection because of its high carrier mobility and wide
spectral absorption range. However, its high dark current caused by its low light absorption …
spectral absorption range. However, its high dark current caused by its low light absorption …
Hydrogen-induced ferromagnetism in ZnO single crystals investigated by magnetotransport
We investigate the electrical and magnetic properties of low-energy H+-implanted ZnO
single crystals with hydrogen concentrations up to∼ 3 at% in the first 20-nm surface layer …
single crystals with hydrogen concentrations up to∼ 3 at% in the first 20-nm surface layer …
Control of positive and negative photo-and thermal-responses in a single PbI 2@ CH 3 NH 3 PbI 3 micro/nanowire-based device for real-time sensing, nonvolatile …
R Gou, S Zhou, C Shi, Q Sun, Z Huang, J Zhao… - Materials …, 2024 - pubs.rsc.org
CH3NH3PbI3 has shown great potential for photodetectors and photovoltaic devices due to
its excellent positive response to visible light. However, its real-time response characteristics …
its excellent positive response to visible light. However, its real-time response characteristics …
Trap‐Related Nonvolatile Negative Photoconductivity in a Single Ag@Al2O3 Hybrid Nanorod for a Photomemory with Light‐Writing and Bias‐Erasing
W Ji, H Zhou, Y Ye, J Zhao, Y ** is affected by the
presence of a n-type background. Magnetotransport measurements can extract detailed …
presence of a n-type background. Magnetotransport measurements can extract detailed …
Multifunctional behaviors of an indium tin oxide/PbLa(ZrTi)O3/indium tin oxide wafer illuminated by ultraviolet light
This article presents multifunctional behaviors of a Pb0. 97La0. 03 (Zr0. 52Ti0. 48) O3
(3/52/48) wafer subjected to ultraviolet light illumination with a focus on its photoresistive …
(3/52/48) wafer subjected to ultraviolet light illumination with a focus on its photoresistive …
Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires
The magneto-transport properties of single proton-implanted ZnO and of Li (7%)-doped ZnO
microwires have been studied. The as-grown microwires were highly insulating and not …
microwires have been studied. The as-grown microwires were highly insulating and not …