Emergent behavior at oxide interfaces has driven research in complex oxide films for the
past 20 years. Interfaces have been engineered for applications in spintronics, topological …

We have conducted a comprehensive thermodynamic analysis of the volatility of 128 binary
oxides to evaluate their suitability as source materials for oxide molecular-beam epitaxy …

Transparent electrodes are a core component for transparent electron devices, photoelectric
devices, and advanced displays. In this work, we fabricate fully-transparent, highly …

A 2-dimensional electron gas (2DEG) system with high mobility was discovered at the
interface of two perovskite oxides: a polar orthorhombic perovskite LaScO3 and a nonpolar …

In an effort to discover a high-mobility p-type oxide, recent computational studies have
focused on Sn2+-based ternary oxides. Ta2SnO6 has been suggested as a potentially …

Sapphire is a technologically highly relevant material, but it poses many challenges when
performing epitaxial thin-film deposition. We have identified and applied the conditions for …

In perovskite oxide heterostructures, bulk functional properties coexist with emergent
physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface …

The high‐mobility, wide‐bandgap perovskite oxide BaSnO3 is taken as a model system to
demonstrate that the native point defects present in un‐doped, epitaxial thin films grown by …

In the molecular beam epitaxy of oxide films, the cation (Sn, Ga) or dopant (Sn) incorporation
does not follow the vapor pressure of the elemental metal sources but is enhanced by …

We report a synthetic route to achieve high electron mobility at room temperature in epitaxial
La: BaSnO 3/SrZrO 3 heterostructures prepared on several oxide substrates. Room …