Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing
AA Nikolskaya, DS Korolev, VN Trushin… - Nuclear Instruments and …, 2023 - Elsevier
The properties of semiconductors are highly dependent on their crystalline structure. The
formation of metastable polytypes under the action of external mechanical stresses leads to …
formation of metastable polytypes under the action of external mechanical stresses leads to …
Femtosecond Laser-Assisted Formation of Hybrid Nanoparticles from Bi-Layer Gold–Silicon Films for Microscale White-Light Source
It is very natural to use silicon as a primary material for microelectronics. However, silicon
application in nanophotonics is limited due to the indirect gap of its energy band structure …
application in nanophotonics is limited due to the indirect gap of its energy band structure …
Influence of chemical nature of implanted atoms on photoluminescence of ion-synthesized 9R-Si hexagonal silicon
A Nikolskaya, D Korolev, A Belov, A Konakov, D Pavlov… - Materials Letters, 2022 - Elsevier
To use silicon in emerging photonic devices, it is necessary to improve its luminescent
properties. In this regard, hexagonal modifications of silicon are attracting great attention, as …
properties. In this regard, hexagonal modifications of silicon are attracting great attention, as …
[HTML][HTML] Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO2/Si system
The study of light-emitting defects in silicon created by ion implantation has gained renewed
interest with the development of quantum optical devices. Improving techniques for creating …
interest with the development of quantum optical devices. Improving techniques for creating …
Interplay of the disorder and strain in gallium oxide
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of
gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting …
gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting …
DISPERSION OF LONGITUDINAL WAVES PROPAGATING IN MATERIALS WITH POINT DEFECTS
VI Erofeev, AV Leonteva, AV Shekoyan - PNRPU Mechanics Bulletin, 2023 - ered.pstu.ru
The paper investigates the propagation of harmonic waves in materials with point defects.
The problem is described by a system of differential equations, which includes a dynamic …
The problem is described by a system of differential equations, which includes a dynamic …
[HTML][HTML] ДИСПЕРСИЯ ПРОДОЛЬНЫХ ВОЛН, РАСПРОСТРАНЯЮЩИХСЯ В МАТЕРИАЛАХ С ТОЧЕЧНЫМИ ДЕФЕКТАМИ
ВИ Ерофеев, АВ Леонтьева… - Вестник Пермского …, 2023 - cyberleninka.ru
Исследуется распространение гармонических волн в материалах с точечными
дефектами. Задача описывается системой дифференциальных уравнений …
дефектами. Задача описывается системой дифференциальных уравнений …