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A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics
In this article, the work on Ge nanocrystals embedded in dielectric films formed by phase
separation from supersaturated solid solutions is reviewed. Different methods to synthesize …
separation from supersaturated solid solutions is reviewed. Different methods to synthesize …
[PDF][PDF] Tuning the properties of Ge and Si nanocrystals based structures by tailoring the preparation conditions Review.
It is well known that the nanostructures have different properties in respect of corresponding
bulk materials due to the size effect [1− 6]. In different nanostructures (nanocrystals …
bulk materials due to the size effect [1− 6]. In different nanostructures (nanocrystals …
Ge nanoparticles in SiO2 for near infrared photodetectors with high performance
In this work we prepared films of amorphous germanium nanoparticles embedded in SiO2
deposited by magnetron sputtering on Si and quartz heated substrates at 300, 400 and 500° …
deposited by magnetron sputtering on Si and quartz heated substrates at 300, 400 and 500° …
Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix
SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect
applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs …
applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs …
Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe–TiO2 Films and Multilayers
Continuous development of Si photonics requires ecological and cost-effective materials. In
this work, SiGe nanocrystals (NCs) embedded in TiO2 are investigated as a photosensitive …
this work, SiGe nanocrystals (NCs) embedded in TiO2 are investigated as a photosensitive …
Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization process
Abstract Amorphous Ge/SiO 2 multilayer structures deposited by magnetron sputtering have
been annealed at different temperatures between 650 and 800° C for obtaining Ge …
been annealed at different temperatures between 650 and 800° C for obtaining Ge …
Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
In this paper, we report studies on Al 2 O 3/Ge/Al 2 O 3 trilayer memory structures deposited
by magnetron sputtering at room temperature on p-Si substrates coated with 3 nm SiO 2 …
by magnetron sputtering at room temperature on p-Si substrates coated with 3 nm SiO 2 …
Enhanced photoconductivity of SiGe nanocrystals in SiO2 driven by mild annealing
Photosensitive films based on finely dispersed semiconductor nanocrystals (NCs) in
dielectric films have great potential for sensor applications. Here we report on preparation …
dielectric films have great potential for sensor applications. Here we report on preparation …
Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix
SiGe nanoparticles dispersed in a dielectric matrix exhibit properties different from those of
bulk and have shown great potential in devices for application in advanced optoelectronics …
bulk and have shown great potential in devices for application in advanced optoelectronics …
Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
We investigate the effect of room-temperature hydrogen-plasma treatment on the
photoconductivity of SiGe nanoparticles sandwiched within SiO 2 layers. An increase in …
photoconductivity of SiGe nanoparticles sandwiched within SiO 2 layers. An increase in …