A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics

D Lehninger, J Beyer, J Heitmann - physica status solidi (a), 2018 - Wiley Online Library
In this article, the work on Ge nanocrystals embedded in dielectric films formed by phase
separation from supersaturated solid solutions is reviewed. Different methods to synthesize …

[PDF][PDF] Tuning the properties of Ge and Si nanocrystals based structures by tailoring the preparation conditions Review.

ML Ciurea, AM Lepadatu - Digest Journal of Nanomaterials & …, 2015 - chalcogen.ro
It is well known that the nanostructures have different properties in respect of corresponding
bulk materials due to the size effect [1− 6]. In different nanostructures (nanocrystals …

Ge nanoparticles in SiO2 for near infrared photodetectors with high performance

I Stavarache, VS Teodorescu, P Prepelita… - Scientific Reports, 2019 - nature.com
In this work we prepared films of amorphous germanium nanoparticles embedded in SiO2
deposited by magnetron sputtering on Si and quartz heated substrates at 300, 400 and 500° …

Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix

I Dascalescu, C Palade, A Slav, I Stavarache… - Scientific Reports, 2024 - nature.com
SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect
applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs …

Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe–TiO2 Films and Multilayers

AM Lepadatu, C Palade, A Slav… - The Journal of …, 2020 - ACS Publications
Continuous development of Si photonics requires ecological and cost-effective materials. In
this work, SiGe nanocrystals (NCs) embedded in TiO2 are investigated as a photosensitive …

Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization process

AM Lepadatu, T Stoica, I Stavarache… - Journal of nanoparticle …, 2013 - Springer
Abstract Amorphous Ge/SiO 2 multilayer structures deposited by magnetron sputtering have
been annealed at different temperatures between 650 and 800° C for obtaining Ge …

Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories

I Stavarache, O Cojocaru, VA Maraloiu… - Applied Surface …, 2021 - Elsevier
In this paper, we report studies on Al 2 O 3/Ge/Al 2 O 3 trilayer memory structures deposited
by magnetron sputtering at room temperature on p-Si substrates coated with 3 nm SiO 2 …

Enhanced photoconductivity of SiGe nanocrystals in SiO2 driven by mild annealing

MT Sultan, A Manolescu, JT Gudmundsson… - Applied Surface …, 2019 - Elsevier
Photosensitive films based on finely dispersed semiconductor nanocrystals (NCs) in
dielectric films have great potential for sensor applications. Here we report on preparation …

Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix

MT Sultan, JT Gudmundsson, A Manolescu… - …, 2019 - iopscience.iop.org
SiGe nanoparticles dispersed in a dielectric matrix exhibit properties different from those of
bulk and have shown great potential in devices for application in advanced optoelectronics …

Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation

MT Sultan, JT Gudmundsson, A Manolescu… - Applied Surface …, 2019 - Elsevier
We investigate the effect of room-temperature hydrogen-plasma treatment on the
photoconductivity of SiGe nanoparticles sandwiched within SiO 2 layers. An increase in …