Defects and reliability of GaN‐based LEDs: review and perspectives
Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters< 30 µm
A matrix of blue GaN/InGaN multi-quantum-well (MQW) micro-Light-Emitting Diodes (micro-
LEDs) with diode dimensions ranging from 2 to 100 µm was prepared by masked dry …
LEDs) with diode dimensions ranging from 2 to 100 µm was prepared by masked dry …
Study and optimization of InGaN Schottky solar cell performance
In this work, an extensive numerical simulation of an In x Ga 1− x N Schottky barrier solar
cell is carried out using Silvaco ATLAS simulator. Firstly, the effect of different Schottky …
cell is carried out using Silvaco ATLAS simulator. Firstly, the effect of different Schottky …
Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system
A drop in the efficiency of light-emitting diodes based on InGaN/GaN QWs known as
the'green gap'has been studied intensively over the past dozen years. Several factors were …
the'green gap'has been studied intensively over the past dozen years. Several factors were …
The Emission Spectra of Pristine and Electron-Irradiated InGaN UV LEDs at Different Temperatures and Injection Currents
RM Vernydub, TI Mosiuk, IV Petrenko… - … on Nanotechnology and …, 2024 - Springer
The electroluminescence profile of the LED based on the In x Ga 1− x N (x≤ 0.1) solid
solutions was studied in detail. The emission spectrum at 300 K consists of three bands: the …
solutions was studied in detail. The emission spectrum at 300 K consists of three bands: the …
Investigation of solar cell devices based on Indium Gallium Nitride (InGaN) ternary alloy.
A Benslim - 2022 - thesis.univ-biskra.dz
The indium gallium nitride (InGaN) alloy offer a great possibility of designing and fabricating
ultra-high efficiency solar cells due to its wide range of direct band gaps, strong absorption …
ultra-high efficiency solar cells due to its wide range of direct band gaps, strong absorption …
Особливості фізичних характеристик вихідних і опромінених електронами з енергією Е= 2 МеВ гомо-та гетероперехідних світлодіодів
ТІ Мосюк - 2024 - enpuir.npu.edu.ua
Дисертаційна робота присвячена дослідженню електрофізичних та оптичних
характеристик вихідних та опромінених електронами з енергією E= 2 МеВ …
характеристик вихідних та опромінених електронами з енергією E= 2 МеВ …