This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …

Single β-phase (100)(Al x Ga1–x) 2O3 thin films were successfully grown on (100) oriented
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …

Crack formation limits the growth of (Al x Ga 1− x) 2 O 3 epitaxial films on Ga 2 O 3
substrates. We employ first-principles calculations to determine the brittle fracture toughness …

Ultrawide-bandgap semiconductors are ushering in the next generation of high-power
electronics. The correct crystal orientation can make or break successful epitaxy of such …

Single α-phase (Al x Ga 1− x) 2 O 3 thin films are grown on m-plane sapphire (α-Al 2 O 3)
substrates via metalorganic chemical vapor deposition. By systematically tuning the growth …

The development of novel ultra-wide bandgap (UWBG) materials requires precise
understanding of the atomic level structural origins that give rise to their important properties …

The valence and conduction band offsets at (100) β-(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3
heterointerfaces with the increasing Al composition are determined via x-ray photoelectron …

Routes to semi-stable phases of Ga2O3 are the subject of extended discussions based on
the review of growth methods, growth conditions, and precursors in works that report semi …

We report the detailed mechanism behind the β to γ phase transformation in Sn-doped and
Si-implanted Ga 2 O 3 that we determined based on the direct observation of the atomic …