Radiation effects in SiGe technology
JD Cressler - IEEE transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
Sub-1-dB and Wideband SiGe BiCMOS Low-Noise Amplifiers for -Band Applications
In this paper, a design methodology for SiGe HBT-based low-noise amplifiers (LNAs) is
proposed that can be utilized for both sub-1-dB noise figure (NF) and wide bandwidth as an …
proposed that can be utilized for both sub-1-dB noise figure (NF) and wide bandwidth as an …
An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P1dB
In this brief, the design, implementation, and experimental results of an X-band low noise
amplifier (LNA) implemented in 0.13 μm SiGe BiCMOS process technology is reported. The …
amplifier (LNA) implemented in 0.13 μm SiGe BiCMOS process technology is reported. The …
A lightweight organic X-band active receiving phased array with integrated SiGe amplifiers and phase shifters
CE Patterson, TK Thrivikraman… - … on Antennas and …, 2010 - ieeexplore.ieee.org
This paper presents for the first time an X-band antenna array with integrated silicon
germanium low noise amplifiers (LNA) and 3-bit phase shifters (PS). LNAs and PSs were …
germanium low noise amplifiers (LNA) and 3-bit phase shifters (PS). LNAs and PSs were …
SiGe HBT X-band LNAs for ultra-low-noise cryogenic receivers
We report results on the cryogenic operation of two different monolithic X-band silicon-
germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) …
germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) …
X‐band SiGe bi‐complementary metal–oxide semiconductor transmit/receive module core chip for phased array RADAR applications
This study presents a transmit/receive (T/R) module core chip with 4‐bit operation using 0.25
µm silicon–germanium (SiGe) bi‐complementary metal–oxide semiconductor (BiCMOS) …
µm silicon–germanium (SiGe) bi‐complementary metal–oxide semiconductor (BiCMOS) …
Design of the low noise amplifier circuit in band L for improve the gain and circuit stability
In this paper, focuses on the design of Low Noise Amplifier circuitry in the frequency band L.
This circuit is designed using the 0.18 nm CMOS transistor technology, which consists of two …
This circuit is designed using the 0.18 nm CMOS transistor technology, which consists of two …
A G-Band SiGe BiCMOS LNA with an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation
This paper presents a BiCMOS low-noise amplifier (LNA) operating at G-band (140 to 220
GHz) that is robust against harsh operation conditions, namely large temperature variations …
GHz) that is robust against harsh operation conditions, namely large temperature variations …
Radiation response of SiGe low noise amplifier irradiated with different energy protons
Z Li, S Liu, MA Adekoya, X Ren, J Zhang, S Liu… - Microelectronics …, 2021 - Elsevier
This research, for the first time, uses different energy protons of 5 MeV and 10 MeV to
irradiate low noise amplifiers (LNAs) with a frequency band ranging from 1.4 GHz to 1.8 GHz …
irradiate low noise amplifiers (LNAs) with a frequency band ranging from 1.4 GHz to 1.8 GHz …
Ultra-low noise amplifier for X-band SiGe BiCMOS phased array applications
This brief presents, a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band.
Different than generally known noise-and-power match technique, the presented LNA is …
Different than generally known noise-and-power match technique, the presented LNA is …