Over the last decades, continuous technological advancements have been made in III‐
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …

Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …

Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …

In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer
platelets with a top c-plane area having an extension of a few hundred nanometers by …

We demonstrate very high luminous efficacy InGaN-based green light-emitting diodes
(LEDs) grown on c-plane patterned sapphire substrates (PSS) using metal organic chemical …

We demonstrate efficient semipolar (11–22) 550 nm yellow/green InGaN light-emitting
diodes (LEDs) with In0. 03Ga0. 97N barriers on low defect density (11–22) GaN/patterned …

The role of a superlattice distributed Bragg reflector (SL DBR) as the p-type electron
blocking layer (EBL) in a GaN micro-light-emitting diode (micro-LED) is numerically …

We investigated the temperature dependence of the electron leakage current in the AlGaN
electron-blocking layer (EBL) of an InGaN/GaN blue light-emitting diode (LED) structure at …

A monolithic nonphosphor broadband-emission light-emitting diode is demonstrated,
comprising a combination of high-density microstructured and nanostructured InGaN-GaN …

The performance characteristics of InGaN double-quantum-well (DQW) laser diodes (LDs)
with different last barrier structures are analyzed numerically by Integrated System …