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Electromigration in submicron interconnect features of integrated circuits
Electromigration (EM) is a complex multiphysics problem including electrical, thermal, and
mechanical aspects. Since the first work on EM was published in 1907, extensive studies on …
mechanical aspects. Since the first work on EM was published in 1907, extensive studies on …
Physically based models of electromigration: From Black's equation to modern TCAD models
Electromigration failure is a major reliability concern for integrated circuits. The continuous
shrinking of metal line dimensions together with the interconnect structure arranged in many …
shrinking of metal line dimensions together with the interconnect structure arranged in many …
[HTML][HTML] Coupling model of electromigration and experimental verification–Part I: Effect of atomic concentration gradient
This paper presented integrated electromigration (EM) studies through experiment, theory,
and simulation. First, extensive EM tests were performed using Blech and standard wafer …
and simulation. First, extensive EM tests were performed using Blech and standard wafer …
Modeling of electromigration in through-silicon-via based 3D IC
Electromigration (EM) is a critical problem for interconnect reliability of modern IC design,
especially as the feature size becomes smaller. In 3D IC technology, the EM problem …
especially as the feature size becomes smaller. In 3D IC technology, the EM problem …
[HTML][HTML] Coupling model of electromigration and experimental verification–Part II: Impact of thermomigration
This paper presented a comprehensive experimental and simulation study for
thermomigration (TM) accompanying electromigration (EM) at elevated current densities …
thermomigration (TM) accompanying electromigration (EM) at elevated current densities …
Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds
The realization of high interconnect densities for three-dimensional integration demands
development of new wafer-to-wafer bonding approaches. Recently introduced Cu-to-Cu …
development of new wafer-to-wafer bonding approaches. Recently introduced Cu-to-Cu …
Investigating the electromigration limits of Cu nano-interconnects using a novel hybrid physics-based model
To predict the impact of technological variables such as materials, dimensions, interfaces,
and operating conditions on Cu electromigration, in this study a hybrid modeling framework …
and operating conditions on Cu electromigration, in this study a hybrid modeling framework …
Electromigration modeling and full-chip reliability analysis for BEOL interconnect in TSV-based 3D ICs
Electromigration (EM) is a critical problem for interconnect reliability of modern integrated
circuits (ICs), especially as the feature size becomes smaller. In three-dimensional (3D) IC …
circuits (ICs), especially as the feature size becomes smaller. In three-dimensional (3D) IC …
Modeling methods for analysis of electromigration degradation in nano-interconnects
Mitigation of the degradation for down-scaled interconnects requires an in-depth
understanding of the failure mechanisms of electromigration and, therefore, the …
understanding of the failure mechanisms of electromigration and, therefore, the …
Grain boundaries-dominated migration failure of copper interconnect under multiphysics field: Insight from theoretical modeling and finite element analysis
Y Zhu, H Bao, Z Yang, H Jiang, F Ma - Microelectronics Reliability, 2024 - Elsevier
As the feature size of Cu interconnects in microelectronic devices are miniaturized into micro-
and even nano-scale, the effects of grain boundaries (GBs) on the electromigration (EM) …
and even nano-scale, the effects of grain boundaries (GBs) on the electromigration (EM) …