Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices

S Peng, D Zhu, J Zhou, B Zhang, A Cao… - Advanced Electronic …, 2019 - Wiley Online Library
Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …

A ferromagnetic skyrmion-based diode with a voltage-controlled potential barrier

L Zhao, X Liang, J ** layers
AP Chen, YP Feng - ACS Applied Materials & Interfaces, 2020 - ACS Publications
Electric-field control of magnetocrystalline anisotropy energy (MAE) is important for the
optimal performance of the tunnel junction components of the STT-MRAM. In such a device …

Ultralow-loss domain wall motion driven by a magnetocrystalline anisotropy gradient in an antiferromagnetic nanowire

DL Wen, ZY Chen, WH Li, MH Qin, DY Chen, Z Fan… - Physical Review …, 2020 - APS
Searching for a new scheme to control the antiferromagnetic (AFM) domain wall is one of the
most important issues for AFM spintronic devices. In this work, we study theoretically the …

Enhancement of anisotropic ultrafast optical nonlinearity in Fe decorated SrTiO3 single crystal

X Zhang, Z Nie, Y Fang, Z **ao, H Wang… - Journal of Alloys and …, 2025 - Elsevier
We report on the anisotropic ultrafast optical nonlinearity of Fe-doped SrTiO 3 composites
(FSTO) using the femtosecond (532 nm, 100 fs) polarization-resolved Z-scan method. The …

Voltage-controlled magnetic tunnel junctions with synthetic ferromagnet free layer sandwiched by asymmetric double MgO barriers

C Grezes, X Li, KL Wong, F Ebrahimi… - Journal of Physics D …, 2019 - iopscience.iop.org
Memory and computing applications utilizing voltage-controlled magnetic random-access
memory (MRAM) require perpendicular magnetic tunnel junctions (pMTJs) capable of high …