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Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices
Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …
considerable attention due to features such as nonvolatility, high scalability, low power, and …
A ferromagnetic skyrmion-based diode with a voltage-controlled potential barrier
L Zhao, X Liang, J ** layers
Electric-field control of magnetocrystalline anisotropy energy (MAE) is important for the
optimal performance of the tunnel junction components of the STT-MRAM. In such a device …
optimal performance of the tunnel junction components of the STT-MRAM. In such a device …
Ultralow-loss domain wall motion driven by a magnetocrystalline anisotropy gradient in an antiferromagnetic nanowire
Searching for a new scheme to control the antiferromagnetic (AFM) domain wall is one of the
most important issues for AFM spintronic devices. In this work, we study theoretically the …
most important issues for AFM spintronic devices. In this work, we study theoretically the …
Enhancement of anisotropic ultrafast optical nonlinearity in Fe decorated SrTiO3 single crystal
X Zhang, Z Nie, Y Fang, Z **ao, H Wang… - Journal of Alloys and …, 2025 - Elsevier
We report on the anisotropic ultrafast optical nonlinearity of Fe-doped SrTiO 3 composites
(FSTO) using the femtosecond (532 nm, 100 fs) polarization-resolved Z-scan method. The …
(FSTO) using the femtosecond (532 nm, 100 fs) polarization-resolved Z-scan method. The …
Voltage-controlled magnetic tunnel junctions with synthetic ferromagnet free layer sandwiched by asymmetric double MgO barriers
Memory and computing applications utilizing voltage-controlled magnetic random-access
memory (MRAM) require perpendicular magnetic tunnel junctions (pMTJs) capable of high …
memory (MRAM) require perpendicular magnetic tunnel junctions (pMTJs) capable of high …