The large amount of light emitted from a light emitting diode (LED) being trapped inside the
semiconductor structure is the consequence of the large value of the refractive index. The …

Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …

This work examines the effects of polarization-related electric fields on the energy band
diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum …

General trends in scaling dimensions of a circular‐shaped flip‐chip light‐emitting diode
(LED) are studied by coupled electrical‐thermal‐optical simulations. Advanced chip design …

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary
brightness. It is demonstrated here both theoretically and experimentally that the layout of …

This study analyzes the current spreading effect and light extraction efficiency (LEE) of
lateral and vertical light-emitting diodes (LEDs). Specifically, this study uses a fully 2-D …

By examining two types of lateral InGaN/GaN light emitting diodes with different contact
patterns, we demonstrate that in the intermediate range of current where the space-charge …

Flip-chip truncated-pyramid-shaped blue micro-light-emitting diodes (μ-LEDs), with different
inclinations of the mesa facets to the epitaxial layer plane, are studied by simulations …

We have theoretically investigated the size-dependent optoelectronic properties of
InGaP/AlGaInP-based red micro-LEDs through an electro-optical-thermal coupling model …

We have investigated the performance of AlGaInP-based red micro-light-emitting diodes
(micro-LEDs) with different n-type contact schemes as functions of current, ambient …