Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%
The open-circuit voltages of mature single-junction photovoltaic devices are lower than the
bandgap energy of the absorber, typically by a gap of 400 mV. For CdTe, which has a …
bandgap energy of the absorber, typically by a gap of 400 mV. For CdTe, which has a …
Comparative studies of optoelectrical properties of prominent PV materials: Halide perovskite, CdTe, and GaAs
We compare three representative high performance PV materials: halide perovskite MAPbI
3, CdTe, and GaAs, in terms of photoluminescence (PL) efficiency, PL lineshape, carrier …
3, CdTe, and GaAs, in terms of photoluminescence (PL) efficiency, PL lineshape, carrier …
Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy
The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at
the CdTe/Mg 0.24 Cd 0.76 Te heterointerface are estimated to be around 0.5 μs and …
the CdTe/Mg 0.24 Cd 0.76 Te heterointerface are estimated to be around 0.5 μs and …
An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures
F Zhang, JF Castaneda, TH Gfroerer… - Light: Science & …, 2022 - nature.com
We demonstrate an all optical approach that can surprisingly offer the possibility of yielding
much more information than one would expect, pertinent to the carrier recombination …
much more information than one would expect, pertinent to the carrier recombination …
Minority-carrier lifetime and surface recombination velocity in single-crystal CdTe
We apply an earlier developed method [Kuciauskas et al., IEEE J. Photovoltaics, vol. 3, p.
1319, 2013] to analyze surface and bulk recombination in high-quality undoped single …
1319, 2013] to analyze surface and bulk recombination in high-quality undoped single …
[HTML][HTML] Heterovalent semiconductor structures and devices grown by molecular beam epitaxy
Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer
attractive properties, such as a very broad range of bandgaps, large conduction band …
attractive properties, such as a very broad range of bandgaps, large conduction band …
[HTML][HTML] Epitaxial lift-off CdTe/MgCdTe double heterostructures for thin-film and flexible solar cells applications
This paper reports an improved epitaxial lift-off (ELO) technology for monocrystalline
CdTe/MgCdTe double-heterostructure (DH) thin films using water-soluble and nearly lattice …
CdTe/MgCdTe double-heterostructure (DH) thin films using water-soluble and nearly lattice …
Magneto-transport study on Sn-rich Sn1− xGex thin films enabled by CdTe buffer layer
α-Sn, generally known as gray tin, has attracted significant scientific interest due to its
potential to host novel topological phases. Studying the transport properties of α-Sn thin …
potential to host novel topological phases. Studying the transport properties of α-Sn thin …
[HTML][HTML] Radiative and interfacial recombination in CdTe heterostructures
CH Swartz, M Edirisooriya, EG LeBlanc… - Applied Physics …, 2014 - pubs.aip.org
Double heterostructures (DH) were produced consisting of a CdTe film between two wide
band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative …
band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative …
[HTML][HTML] Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1− xTe double heterostructures with different Mg compositions grown by molecular …
The interface recombination velocities of CdTe/Mg x Cd 1− x Te double heterostructure (DH)
samples with different CdTe layer thicknesses and Mg compositions are studied using time …
samples with different CdTe layer thicknesses and Mg compositions are studied using time …