BACKGROUND Transistors are one of the most enabling “hidden” technologies of all time
and have facilitated the development of computers, the Internet, thin mobile displays, and …

Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …

Carbon nanotube field-effect transistors are strong candidates in replacing or supplementing
silicon technology. Although theoretical studies have projected that nanotube transistors will …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

This paper discusses the electronic transport properties of nanowire field-effect transistors
(NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs …

Single-walled carbon nanotubes (CNTs) have been considered as a promising
semiconductor to construct transistors and integrated circuits in the future owing to their …

As conventional transistors become smaller and thinner in the quest for higher performance,
a number of hurdles are encountered. The discovery of electronic-grade 2-D crystals has …

For point-of-care (POC) applications, robust, ultrasensitive, small, rapid, low-power and low-
cost sensors are highly desirable. Here, we present a novel biosensor based on a …

Semiconducting carbon nanotubes (CNTs) have several properties that are advantageous
for field effect transistors such as high mobility, good electrostatics due to their small …

Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising
candidates for low-power integration circuits beyond conventional metal-oxide …