Recent technology advances of emerging memories
Editor's note: Phase change memory, spin-transfer torque random access memory, and
resistive random access memory are three major emerging memory technologies that …
resistive random access memory are three major emerging memory technologies that …
Modeling methodology for thermal stability factor in spin transfer torque magneto-resistive random access memories
A Talapatra, M Weisheit, J Müller… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This article presents systematic pathways to model the thermal stability factor for magneto-
resistive random access memories using atomistic simulations. The model involves …
resistive random access memories using atomistic simulations. The model involves …
One-shot online testing of deep neural networks based on distribution shift detection
Neural networks (NNs) are capable of learning complex patterns and relationships in data to
make predictions with high accuracy, making them useful for various tasks. However, NNs …
make predictions with high accuracy, making them useful for various tasks. However, NNs …
Neuroscrub+: Mitigating retention faults using flexible approximate scrubbing in neuromorphic fabric based on resistive memories
Neuromorphic computation-in-memory fabric based on emerging nonvolatile memories
considered an attractive option to accelerate neural networks (NNs) in hardware as they …
considered an attractive option to accelerate neural networks (NNs) in hardware as they …
Tolerating retention failures in neuromorphic fabric based on emerging resistive memories
In recent years, computation is shifting from conventional high performance servers to
Internet of Things (IoT) edge devices, most of which require the processing of cognitive …
Internet of Things (IoT) edge devices, most of which require the processing of cognitive …
Few-Shot Testing: Estimating Uncertainty of Memristive Deep Neural Networks Using One Bayesian Test Vector
Neuroscrub: Mitigating retention failures using approximate scrubbing in neuromorphic fabric based on resistive memories
Neuromorphic computation-in-memory fabric based on emerging non-volatile memories
(NVM) is considered an attractive option to accelerate neural networks (NNs) in hardware as …
(NVM) is considered an attractive option to accelerate neural networks (NNs) in hardware as …
High-efficiency array-level MRAM parameters extraction with the device-in-series test structure
Z Zhang, S Gao, Y Zhao, X Yang, J Zhao… - Journal of Applied …, 2022 - pubs.aip.org
The precise extraction of magnetic tunnel junction parameters at device level is important for
understanding the weak point and its root cause in the stack design, which allows for future …
understanding the weak point and its root cause in the stack design, which allows for future …
Evaluation of Effective Thermal Stability Factor for Patterned Magnetic Tunnel Junction Array
K Sivabalan, K Yamane, VB Naik… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
Accurate and early estimation of the thermal stability factor of a memory array is essential for
the development of modern non-volatile magnetic storage devices. We propose an …
the development of modern non-volatile magnetic storage devices. We propose an …