We investigated the suitability of ammonium persulfate (APS) and potassium oleate (PO)
containing silica dispersions for polishing Co interconnects based on removal and …

The use of benzotriazole (BTA) during Co film planarization leads to the undesirable
formation of insoluble Co-BTA complexes, which can be observed as organic residues on …

US20160309596A1 - Methods for forming cobalt interconnects - Google Patents
US20160309596A1 - Methods for forming cobalt interconnects - Google Patents Methods …

Abstract Systems and methods for achieving uniformity across a redistribution layer are
described. One of the methods includes patterning a photoresist layer over a substrate. The …

Compositions and methods of using such compositions for electroplating cobalt onto
semiconductor base structures comprising submicron-sized electrical interconnect features …

(57) ABSTRACT A method of forming a semiconductor device includes forming an opening
in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is …

1-(2-Hydroxyethyl) imidazolidine-2-thione (1) was obtained as a product from an in situ
reaction between N-(2-hydroxyethyl) ethylenediamine, carbon disulfide, potassium …

Chemical mechanical planarization (CMP) is the only process capable of achieving global
planarization for both dielectric structures and metal interconnects that are integral parts of …

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to
produce a level deposit across the surface of the substrate. The cobalt electrolyte contains …

(57) ABSTRACT A nickel electrodeposition composition for via fill or barrier nickel
interconnect fabrication comprising:(a) a source of nickel ions;(b) one or more polarizing …