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Strain and Defect Evolution of Si1-xGex/Si Heterostructures Grown by Pulsed Laser Induced Epitaxy
The relaxation mechanism of Si 1-x Ge x/Si heterostructures subjected to pulsed laser
melting was investigated by probing the pulsed laser induced epitaxy (PLIE) regime of …
melting was investigated by probing the pulsed laser induced epitaxy (PLIE) regime of …
Laser‐Annealed SiO2/Si1−xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation
Ultraviolet nanosecond laser annealing (UV‐NLA) proves to be an important technique,
particularly when tightly controlled heating and melting are necessary. In the realm of …
particularly when tightly controlled heating and melting are necessary. In the realm of …
Pulsed Laser Melting of Silicon-Germanium/Silicon Heterostructures
JA Johnson II - 2021 - search.proquest.com
Aggressive dimensional scaling of CMOS transistors has led to the interfacial contact
resistance at the metal-S/D interface to become the most significant contributor of parasitic …
resistance at the metal-S/D interface to become the most significant contributor of parasitic …