Spintronics holds the promise for future information technologies. Devices based on
manipulation of spin are most likely to replace the current silicon complementary metal …

Abstract Ferromagnetic Co2-Heusler compounds showing high spin polarization have been
utilized as spin injectors and detectors for III–V and Group-IV semiconductors. In this article …

We report a combined theoretical and experimental study of a novel quaternary Heusler
system, CoFeVSb, from the viewpoint of room-temperature spintronics and thermoelectric …

This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the
electrical spin injection from ferromagnets (FM), where Ge is a next generation …

We report an experimental demonstration of room-temperature spin transport in n-type Ge
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …

To achieve spin transport in heavily doped n-type Ge (n+-type Ge) in the high-temperature
range (T≥ 130 K), we examine the growth of highly spin-polarized Co 2 FeAl 0.5 Si 0.5 …

We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …

In this report, structural, electronic, magnetic and transport properties of quaternary Heusler
alloys CoRuMnGe and CoRuVZ (Z= Al, Ga) are investigated. All the three alloys are found to …

We experimentally study temperature-dependent spin relaxation including lateral spin
diffusion in heavily doped n-type silicon (n+-Si) layers by measuring nonlocal …

We demonstrate large-area (∼ 600 μm),(111)-oriented, and high-crystallinity, ie, pseudo-
single-crystalline, germanium (Ge) films at 275 C, where the temperature is lower than the …