Ferroelectric thin films: Review of materials, properties, and applications

N Setter, D Damjanovic, L Eng, G Fox… - Journal of applied …, 2006 - pubs.aip.org
An overview of the state of art in ferroelectric thin films is presented. First, we review
applications: microsystems' applications, applications in high frequency electronics, and …

Two‐dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks

M Osada, T Sasaki - Advanced Materials, 2012 - Wiley Online Library
Abstract Two‐dimensional (2D) nanosheets, which possess atomic or molecular thickness
and infinite planar lengths, are regarded as the thinnest functional nanomaterials. The …

Ferroelectric materials for microwave tunable applications

AK Tagantsev, VO Sherman, KF Astafiev… - Journal of …, 2003 - Springer
A review of the properties of ferroelectric materials that are relevant to microwave tunable
devices is presented: we discuss the theory of dielectric response of tunable bulk materials …

Alternative dielectrics to silicon dioxide for memory and logic devices

AI Kingon, JP Maria, SK Streiffer - Nature, 2000 - nature.com
The silicon-based microelectronics industry is rapidly approaching a point where device
fabrication can no longer be simply scaled to progressively smaller sizes. Technological …

[BOOK][B] Domains in ferroic crystals and thin films

AK Tagantsev, LE Cross, J Fousek - 2010 - Springer
With much excitement and great enthusiasm I introduce this thorough treatise on the major
aspects of domain and domain wall phenomena in ferroics, mostly ferroelectrics, a major …

Thin-film piezoelectric MEMS

CB Eom, S Trolier-McKinstry - Mrs Bulletin, 2012 - cambridge.org
Major challenges have emerged as microelectromechanical systems (MEMS) move to
smaller size and increased integration density, while requiring fast response and large …

Interface-induced phenomena in polarization response of ferroelectric thin films

AK Tagantsev, G Gerra - Journal of applied physics, 2006 - pubs.aip.org
This article reviews the existing theoretical models describing the interface-induced
phenomena which affect the switching characteristics and dielectric properties of …

Theoretical current-voltage characteristics of ferroelectric tunnel junctions

H Kohlstedt, NA Pertsev, J Rodríguez Contreras… - Physical Review B …, 2005 - APS
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of
two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current …

Scaling effects in perovskite ferroelectrics: fundamental limits and process‐structure‐property relations

JF Ihlefeld, DT Harris, R Keech… - Journal of the …, 2016 - Wiley Online Library
Ferroelectric materials are well‐suited for a variety of applications because they can offer a
combination of high performance and scaled integration. Examples of note include …

Method of forming a capacitor

C Basceri - US Patent 7,052,584, 2006 - Google Patents
A method of forming a capacitor having a capacitor dielectric layer comprising ABO 3, where
“A” is selected from the group consisting of Sn and Group IIA metal elements and mixtures …