The coupling between light and collective oscillations of free carriers at metallic surfaces
and nanostructures is at the origin of one of the main fields of nanophotonics: plasmonics …

Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of
molecules. While gold has been used almost exclusively so far, recent research has focused …

Heavily doped semiconductor thin films are very promising for application in mid-infrared
plasmonic devices because the real part of their dielectric function is negative and broadly …

This study presents a laser activation process (LAP) for germanium (Ge) to improve the
electrical performance of n-type Ge devices. The LAP highly activated the dopant and …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Antimony segregation in Ge (001) films grown by molecular beam epitaxy was studied. A
quantitative dependence of the Sb segregation ratio in Ge on growth temperature was …

Germanium is reemerging as a prominent material in the semiconductor field, particularly for
electronic applications, photonics, photovoltaics, and thermophotovoltaics. Its combination …

Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon
(Si) substrates has been critical for realizing high-performance Si-based optoelectronic and …

Heavy n-type do** has been proposed as a route to achieve positive optical gain in
germanium layers since it is supposed to enhance the Γ c carrier density. Nevertheless, the …