Transistors based on two-dimensional materials for future integrated circuits
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
Bandgap engineering of two-dimensional semiconductor materials
Semiconductors are the basis of many vital technologies such as electronics, computing,
communications, optoelectronics, and sensing. Modern semiconductor technology can trace …
communications, optoelectronics, and sensing. Modern semiconductor technology can trace …
Ballistic two-dimensional InSe transistors
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
Synergistic Polarization Loss of MoS2‐Based Multiphase Solid Solution for Electromagnetic Wave Absorption
Given tunable hybridization structures in solid solutions, fascinating electromagnetic (EM)
properties can be achieved for regulating EM wave (EMW) absorption. Herein, a novel metal …
properties can be achieved for regulating EM wave (EMW) absorption. Herein, a novel metal …
Making clean electrical contacts on 2D transition metal dichalcogenides
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …
emerged as highly promising for new electronic technologies. However, a key challenge in …
2D metallic transition‐metal dichalcogenides: structures, synthesis, properties, and applications
Abstract 2D materials and the associated heterostructures define an ideal material platform
for investigating physical and chemical properties, and exhibiting new functional …
for investigating physical and chemical properties, and exhibiting new functional …
Fermi level pinning dependent 2D semiconductor devices: challenges and prospects
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
Layer-structured anisotropic metal chalcogenides: recent advances in synthesis, modulation, and applications
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …
Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
Metal–semiconductor junctions are essential components in electronic and optoelectronic
devices. With two-dimensional semiconductors, conventional metal deposition via ion …
devices. With two-dimensional semiconductors, conventional metal deposition via ion …
In situ polymerized polyaniline/MXene (V2C) as building blocks of supercapacitor and ammonia sensor self-powered by electromagnetic-triboelectric hybrid generator
This paper reports in situ polymerization of polyaniline (PANI)/MXene (V 2 C) composites as
building blocks of supercapacitor and ammonia sensor self-powered by electromagnetic …
building blocks of supercapacitor and ammonia sensor self-powered by electromagnetic …