This study demonstrated the epitaxial growth of single-phase (111) CoO and (111) Co3O4
thin films on a-plane sapphire substrates using an atmospheric pressure mist chemical …

Zinc tin oxide (Zn–Sn–O, or ZTO) semiconductor layers were synthesized based on solution
processes, of which one type involves the conventional spin coating method and the other is …

The carbon quantum dots modified ZnO/TiO 2 nanotube heterojunction is synthesized via
simple electrospinning–hydrothermal method. The results of SEM, XRD, TEM, FT-IR and …

In this paper, the growth, structural and optical properties of the hexagonal ZnO
nanostructures grown by Ultrasonic Spray Chemical Vapor Deposition (USCVD) method at …

Recently, wide-bandgap (WBG) 1) 3) semiconductors such as silicon carbide4) and gallium
nitride5) have been used in various electronic devices. These WBG semiconductors have …

The {ZnO/CdO} 30 superlattices (SLs) series were grown at different temperatures (350–
550° C) on m-plane Al2O3 substrates by molecular beam epitaxy. The structural properties …

ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar
ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer …

Uniform thickness Al 2 O 3 thin films have been deposited by eco-friendly mist CVD. The
obtained Al 2 O 3 film has an optical band gap value of more than 6.5 eV and a refractive …

Aluminum titanium oxide (Al 1–x Ti x O y, an alloy of Al 2 O 3 and TiO 2), an attractive high-κ
dielectric material, was synthesized by mist chemical vapor deposition, utilizing Al 2 O 3 and …

Aluminum oxide (AlO x) thin films were synthesized by mist-chemical vapor deposition (mist-
CVD) using aluminum acetylacetonate (Al (acac) 3) dissolved in an aqueous solvent mixture …