Metal oxides for optoelectronic applications
Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients
in traditional ceramics. MO semiconductors are strikingly different from conventional …
in traditional ceramics. MO semiconductors are strikingly different from conventional …
A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
Metal oxide semiconductor thin-film transistors for flexible electronics
The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …
novel applications, such as wearable and textile integrated devices, seamless and …
Recent advances of solution-processed metal oxide thin-film transistors
Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the
most promising transistor technologies for future large-area flexible electronics. This work …
most promising transistor technologies for future large-area flexible electronics. This work …
Low-temperature crystallization of solution-derived metal oxide thin films assisted by chemical processes
Over the last few years the efforts devoted to the research on low-temperature processing of
metal oxide thin films have increased notably. This has enabled the direct integration of …
metal oxide thin films have increased notably. This has enabled the direct integration of …
High Electron mobility thin‐film transistors based on solution‐processed semiconducting metal oxide heterojunctions and quasi‐superlattices
High mobility thin‐film transistor technologies that can be implemented using simple and
inexpensive fabrication methods are in great demand because of their applicability in a wide …
inexpensive fabrication methods are in great demand because of their applicability in a wide …
Oxygen “getter” effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X= Ga, Sc, Y, La) transistors
In oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen
binding metal ion (“oxygen getter”), X, functions to control O vacancies and enhance lattice …
binding metal ion (“oxygen getter”), X, functions to control O vacancies and enhance lattice …
Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor
In this review, we discuss the recent developments of high-performance and improved-
stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin …
stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin …
High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180° C.
An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV
irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO …
irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO …
Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors
We developed a facile and environmentally friendly solution-processed method for
aluminum oxide (AlO x) dielectrics. The formation and properties of AlO x thin films under …
aluminum oxide (AlO x) dielectrics. The formation and properties of AlO x thin films under …