A review on thermophotovoltaic cell and its applications in energy conversion: issues and recommendations
Generally, waste heat is redundantly released into the surrounding by anthropogenic
activities without strategized planning. Consequently, urban heat islands and global …
activities without strategized planning. Consequently, urban heat islands and global …
Antimonide-based compound semiconductors for electronic devices: A review
BR Bennett, R Magno, JB Boos, W Kruppa… - Solid-State …, 2005 - Elsevier
Several research groups have been actively pursuing antimonide-based electronic devices
in recent years. The advantage of narrow-bandgap Sb-based devices over conventional …
in recent years. The advantage of narrow-bandgap Sb-based devices over conventional …
The physics and technology of gallium antimonide: An emerging optoelectronic material
PS Dutta, HL Bhat, V Kumar - Journal of applied physics, 1997 - pubs.aip.org
Recent advances in nonsilica fiber technology have prompted the development of suitable
materials for devices operating beyond 1.55 μ m. The III–V ternaries and quaternaries …
materials for devices operating beyond 1.55 μ m. The III–V ternaries and quaternaries …
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors
RM Feenstra - Physical Review B, 1994 - APS
Results of tunneling spectroscopy measurements of the (110) cleaved surface of GaAs, InP,
GaSb, InAs, and InSb are presented. These materials form the family of direct-gap III-V …
GaSb, InAs, and InSb are presented. These materials form the family of direct-gap III-V …
[KİTAP][B] Analysis and simulation of heterostructure devices
V Palankovski, R Quay - 2004 - books.google.com
Communication and information systems are subject to rapid and highly so phisticated
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
Quaternary InGaAsSb thermophotovoltaic diodes
MW Dashiell, JF Beausang, H Ehsani… - … on Electron Devices, 2006 - ieeexplore.ieee.org
In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice matched to
GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of EG= 0.5 to …
GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of EG= 0.5 to …
Below bandgap optical absorption in tellurium-doped GaSb
A Chandola, R Pino, PS Dutta - Semiconductor Science and …, 2005 - iopscience.iop.org
Enhancement in below bandgap room temperature infrared transmission has been
observed in tellurium (Te)-doped GaSb bulk crystals. The effect of Te concentration on the …
observed in tellurium (Te)-doped GaSb bulk crystals. The effect of Te concentration on the …
Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes
Monolithic integration of GaSb-based optoelectronic devices on Si is a promising approach
for achieving a low-cost, compact, and scalable infrared photonics platform. While …
for achieving a low-cost, compact, and scalable infrared photonics platform. While …
Temperature-dependent GaSb material parameters for reliable thermophotovoltaic cell modelling
D Martín, C Algora - Semiconductor Science and Technology, 2004 - iopscience.iop.org
GaSb photovoltaic cells are the most common choice for receivers in thermophotovoltaic
(TPV) systems. Although nowadays their manufacturing technology is well established, a …
(TPV) systems. Although nowadays their manufacturing technology is well established, a …
[KİTAP][B] Compound semiconductor bulk materials and characterizations
O Oda - 2007 - books.google.com
This book is concerned with compound semiconductor bulk materials and has been written
for students, researchers and engineers in material science and device fabrication. It offers …
for students, researchers and engineers in material science and device fabrication. It offers …