Method of forming a structure on a substrate
T Blanquart, D De Roest - US Patent 10,269,558, 2019 - Google Patents
The invention relates to a method of providing a structure by depositing a layer on a
substrate in a reactor. The method comprising: introducing a silicon halide precursor in the …
substrate in a reactor. The method comprising: introducing a silicon halide precursor in the …
Thin film forming method
Y Kim, Y Kim - US Patent 12,025,484, 2024 - Google Patents
A thin film forming method includes: a first operation of supplying a source gas at a first flow
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
Method of forming a structure on a substrate
TJV Blanquart, SP Haukka - US Patent 10,867,788, 2020 - Google Patents
The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …
Sequential infiltration synthesis apparatus
IJ Raaijmakers, JW Maes, W Knaepen… - US Patent …, 2023 - Google Patents
2017-02-28 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Method for depositing oxide film by thermal ALD and PEALD
A Fukazawa, H Fukuda - US Patent 10,655,221, 2020 - Google Patents
A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes:
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …
Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
K Väyrynen, M Ritala, M Leskelä - US Patent 10,468,261, 2019 - Google Patents
Methods for forming a metallic film on a substrate by cyclical deposition are provided. In
some embodiments methods may include contacting the substrate with a first reactant …
some embodiments methods may include contacting the substrate with a first reactant …
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
JW Maes, W Knaepen, KK Kachel… - US Patent …, 2022 - Google Patents
A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and
arranged to hold at least a first substrate; a precursor distribution and removal system to …
arranged to hold at least a first substrate; a precursor distribution and removal system to …
Method of reforming insulating film deposited on substrate with recess pattern
A Kobayashi, M Zaitsu, N Kobayashi… - US Patent 10,283,353, 2019 - Google Patents
Primary Examiner—Mohammad Choudhry (74) Attorney, Agent, or Firm—Snell & Wilmer
LLP ABSTRACT A method of reforming an insulating film deposited on a substrate having a …
LLP ABSTRACT A method of reforming an insulating film deposited on a substrate having a …
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Substrate processing apparatus
YH Kim, YG Han, DY Kim, HS Jang, JH Lee - US Patent 11,001,925, 2021 - Google Patents
A substrate processing apparatus having improved uniformity and speed of reaction is
provided. A substrate processing apparatus includes a body portion comprising a discharge …
provided. A substrate processing apparatus includes a body portion comprising a discharge …