Structural properties of self-organized semiconductor nanostructures

J Stangl, V Holý, G Bauer - Reviews of modern physics, 2004 - APS
Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

A review of recent works on inclusions

K Zhou, HJ Hoh, X Wang, LM Keer, JHL Pang… - Mechanics of …, 2013 - Elsevier
The study of inclusions is of significance to the development of advanced materials for
aerospace, marine, automotive and many other applications. This is because the presence …

[KİTAP][B] Quantum dot heterostructures

D Bimberg, M Grundmann, NN Ledentsov - 1999 - books.google.com
Quantum Dot Heterostructures Dieter Bimberg, Marius Grundmann and Nikolai N.
Ledentsov Institute of Solid State Physics, Technische Universität Berlin, Germany Quantum …

Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems

AD Yoffe - Advances in physics, 2001 - Taylor & Francis
This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …

Electronic and optical properties of strained quantum dots modeled by 8-band k⋅ p theory

O Stier, M Grundmann, D Bimberg - Physical Review B, 1999 - APS
We present a systematic investigation of the elastic, electronic, and linear optical properties
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …

[KİTAP][B] High-resolution X-ray scattering: from thin films to lateral nanostructures

U Pietsch, V Holy, T Baumbach - 2004 - books.google.com
During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has
grown as a result of the development of the semiconductor industry and the increasing …

Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled quantum dots

G Bester, S Nair, A Zunger - Physical Review B, 2003 - APS
The atomistic pseudopotential method is used to accurately predict the electron-hole
exchange-induced fine structure (FS) and polarization anisotropy in million-atom In 1− x Ga …

Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots

AJ Williamson, LW Wang, A Zunger - Physical Review B, 2000 - APS
We adopt an atomistic pseudopotential description of the electronic structure of self-
assembled, lens-shaped InAs quantum dots within the “linear combination of bulk bands” …

Impact of size, shape, and composition on piezoelectric effects and electronic properties of quantum dots

A Schliwa, M Winkelnkemper, D Bimberg - Physical Review B—Condensed …, 2007 - APS
The strain fields in and around self-organized In (Ga) As∕ Ga As quantum dots (QDs)
sensitively depend on QD geometry, average InGaAs composition, and the In∕ Ga …

NEMO5: A parallel multiscale nanoelectronics modeling tool

S Steiger, M Povolotskyi, HH Park… - IEEE Transactions …, 2011 - ieeexplore.ieee.org
The development of a new nanoelectronics modeling tool, NEMO5, is reported. The tool
computes strain, phonon spectra, electronic band structure, charge density, charge current …