Structural properties of self-organized semiconductor nanostructures
J Stangl, V Holý, G Bauer - Reviews of modern physics, 2004 - APS
Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …
A review of recent works on inclusions
The study of inclusions is of significance to the development of advanced materials for
aerospace, marine, automotive and many other applications. This is because the presence …
aerospace, marine, automotive and many other applications. This is because the presence …
[KİTAP][B] Quantum dot heterostructures
Quantum Dot Heterostructures Dieter Bimberg, Marius Grundmann and Nikolai N.
Ledentsov Institute of Solid State Physics, Technische Universität Berlin, Germany Quantum …
Ledentsov Institute of Solid State Physics, Technische Universität Berlin, Germany Quantum …
Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems
AD Yoffe - Advances in physics, 2001 - Taylor & Francis
This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
Electronic and optical properties of strained quantum dots modeled by 8-band k⋅ p theory
We present a systematic investigation of the elastic, electronic, and linear optical properties
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …
[KİTAP][B] High-resolution X-ray scattering: from thin films to lateral nanostructures
During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has
grown as a result of the development of the semiconductor industry and the increasing …
grown as a result of the development of the semiconductor industry and the increasing …
Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled quantum dots
The atomistic pseudopotential method is used to accurately predict the electron-hole
exchange-induced fine structure (FS) and polarization anisotropy in million-atom In 1− x Ga …
exchange-induced fine structure (FS) and polarization anisotropy in million-atom In 1− x Ga …
Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots
We adopt an atomistic pseudopotential description of the electronic structure of self-
assembled, lens-shaped InAs quantum dots within the “linear combination of bulk bands” …
assembled, lens-shaped InAs quantum dots within the “linear combination of bulk bands” …
Impact of size, shape, and composition on piezoelectric effects and electronic properties of quantum dots
The strain fields in and around self-organized In (Ga) As∕ Ga As quantum dots (QDs)
sensitively depend on QD geometry, average InGaAs composition, and the In∕ Ga …
sensitively depend on QD geometry, average InGaAs composition, and the In∕ Ga …
NEMO5: A parallel multiscale nanoelectronics modeling tool
S Steiger, M Povolotskyi, HH Park… - IEEE Transactions …, 2011 - ieeexplore.ieee.org
The development of a new nanoelectronics modeling tool, NEMO5, is reported. The tool
computes strain, phonon spectra, electronic band structure, charge density, charge current …
computes strain, phonon spectra, electronic band structure, charge density, charge current …