Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
The dawn of Ga2O3 HEMTs for high power electronics-A review
Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …
semiconductor material for intended applications in RF, power electronics, and sensors with …
[HTML][HTML] β-Gallium oxide power electronics
[HTML][HTML] Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD
The valence and conduction band offsets at (100) β-(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3
heterointerfaces with the increasing Al composition are determined via x-ray photoelectron …
heterointerfaces with the increasing Al composition are determined via x-ray photoelectron …
First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (AlGa)O alloys
JB Varley - Journal of Materials Research, 2021 - Springer
Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting
numerous structural phases with unique optoelectronic properties that make them attractive …
numerous structural phases with unique optoelectronic properties that make them attractive …
Phase stability of ( polymorphs: A first-principles study
Monoclinic Ga 2 O 3 and (Al x Ga 1− x) 2 O 3 alloys are wide-band-gap semiconductors with
promising applications in power electronics. Although the physical properties of monoclinic …
promising applications in power electronics. Although the physical properties of monoclinic …
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
Single β-phase (100)(Al x Ga1–x) 2O3 thin films were successfully grown on (100) oriented
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …
[HTML][HTML] Energy-band alignments at ZnO/Ga2O3 and Ta2O5/Ga2O3 heterointerfaces by X-ray photoelectron spectroscopy and electron affinity rule
Wide bandgap oxide semiconductors have been a hot topic in electronic and optoelectronic
technologies. The oxide heterojunctions provide many significant favorable properties in …
technologies. The oxide heterojunctions provide many significant favorable properties in …