Near-surface InAs two-dimensional electron gas on a GaAs substrate: Characterization and superconducting proximity effect
We have studied a near-surface two-dimensional electron gas based on an InAs quantum
well on a GaAs substrate. In devices without a dielectric layer we estimated large electron …
well on a GaAs substrate. In devices without a dielectric layer we estimated large electron …
Growth variations and scattering mechanisms in metamorphic In0. 75Ga0. 25As/In0. 75 Al0. 25As quantum wells grown by molecular beam epitaxy
Abstract Modulation doped metamorphic In 0.75 Ga 0.25 As/In 0.75 Al 0.25 As quantum
wells (QW) were grown on GaAs substrates by molecular beam epitaxy (MBE) with step …
wells (QW) were grown on GaAs substrates by molecular beam epitaxy (MBE) with step …
[HTML][HTML] Repairing the surface of InAs-based topological heterostructures
SJ Pauka, JDS Witt, CN Allen… - Journal of Applied …, 2020 - pubs.aip.org
Candidate systems for topologically-protected qubits include two-dimensional electron
gases (2DEGs) based on heterostructures exhibiting a strong spin–orbit interaction and …
gases (2DEGs) based on heterostructures exhibiting a strong spin–orbit interaction and …
[HTML][HTML] Optimization of In-Situ Growth of Superconducting Al/InAs Hybrid Systems on GaAs for the Development of Quantum Electronic Circuits
Hybrid systems consisting of highly transparent channels of low-dimensional
semiconductors between superconducting elements allow the formation of quantum …
semiconductors between superconducting elements allow the formation of quantum …
Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells
InAs quantum wells (QWs) are promising material systems due to their small effective mass,
narrow bandgap, strong spin–orbit coupling, large g-factor, and transparent interface to …
narrow bandgap, strong spin–orbit coupling, large g-factor, and transparent interface to …
Metamorphic InAs/InGaAs QWs with electron mobilities exceeding 7× 105 cm2/Vs
We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic
InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in …
InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in …
Postgrowth Sha** and Transport Anisotropy in Two-Dimensional InAs Nanofins
We report on the postgrowth sha** of free-standing two-dimensional (2D) InAs nanofins
that are grown by selective-area epitaxy and mechanically transferred to a separate …
that are grown by selective-area epitaxy and mechanically transferred to a separate …
Magnetic ordering effects in a Mn-modulation-doped high mobility two-dimensional hole system
We have studied the magnetotransport properties of a manganese (Mn)-modulation-doped
high mobility two-dimensional hole system in a strained InAs quantum well (QW) structure …
high mobility two-dimensional hole system in a strained InAs quantum well (QW) structure …
Andreev reflection at the edge of a two-dimensional electron system with strong spin-orbit coupling
We experimentally investigate transport properties of a single planar junction between the
niobium superconductor and the edge of a two-dimensional electron system in a narrow In …
niobium superconductor and the edge of a two-dimensional electron system in a narrow In …
Electron mobility anisotropy in InAs/GaAs (001) heterostructures
SP Le, T Suzuki - Applied Physics Letters, 2021 - pubs.aip.org
Electron transport properties in InAs films epitaxially grown on GaAs (001), InAs/GaAs (001)
heterostructures, were systematically investigated through the dependence on crystal …
heterostructures, were systematically investigated through the dependence on crystal …