Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors
The aspiration of electronic technologies that are resistant to high‐energy cosmic radiation
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
[HTML][HTML] Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing
There are pressing problems with traditional computing, especially for accomplishing data-
intensive and real-time tasks, that motivate the development of in-memory computing …
intensive and real-time tasks, that motivate the development of in-memory computing …
Irradiation effects on perpendicular anisotropy spin–orbit torque magnetic tunnel junctions
We study the impact of irradiation on magnetic tunnel junction (MTJ) films with perpendicular
magnetic anisotropy (PMA) and spin-orbit torque (SOT) switching using magneto-optical …
magnetic anisotropy (PMA) and spin-orbit torque (SOT) switching using magneto-optical …
Investigation of lithium (Li) do** on the resistive switching property of p-Li: NiO/n-β-Ga2O3 thin-film based heterojunction devices
Li-doped NiO/β-Ga 2 O 3 polycrystalline bilayer thin-film pn-heterojunctions with different Li-
do** concentrations are grown on Si-substrates using the pulsed laser deposition …
do** concentrations are grown on Si-substrates using the pulsed laser deposition …
Ionization and displacement damage on nanostructure of spin–orbit torque magnetic tunnel junction
B Wang, M Wang, H Zhang, Z Wang… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
Spin–orbit torque magnetic tunnel junction (SOT-MTJ) is the memory cell of magnetic
random access memory (MRAM), which is a promising candidate for upper level cache in …
random access memory (MRAM), which is a promising candidate for upper level cache in …
Role of interface intermixing on perpendicular magnetic anisotropy of cobalt-iron-boron alloy
Perpendicular magnetic anisotropy (PMA) is crucial in magnetic tunnel junctions (MTJs) for
next-generation devices such as non-volatile memory devices–magnetic random-access …
next-generation devices such as non-volatile memory devices–magnetic random-access …
A Radiation-hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices
S Zhang, P Dai, N Li, Y Chen - Applied Sciences, 2024 - mdpi.com
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated
environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears …
environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears …
MRAM 的辐射效应分析及加固方法简述
施辉， 张海良， 宋思德， 曹利超， 王印权， 刘国柱… - 航天器环境工程, 2021 - seejournal.cn
回顾从首款商用磁随机存取存储器(MRAM) 芯片面世以来国际上对MRAM 芯片辐射效应的研究;
总结MRAM 总剂量电离效应和单粒子效应辐照试验研究结果, 以及辐射效应导致MRAM …
总结MRAM 总剂量电离效应和单粒子效应辐照试验研究结果, 以及辐射效应导致MRAM …
抗辐照 MRAM 研究进展.
孙杰杰， 王超， **嘉威， 姜传鹏… - Journal of National …, 2023 - search.ebscohost.com
新型非易失磁性随机存储器(magneticrandomaccessmemory, MRAM) 具有读写速度快,
数据保持时间长, 功耗低等优点, 引起了研究人员的广泛关注. 其优异的抗辐照能力被人们深入 …
数据保持时间长, 功耗低等优点, 引起了研究人员的广泛关注. 其优异的抗辐照能力被人们深入 …
Magnetic tunnel junction devices and circuits for in-memory, neuromorphic and radiation hard computing
M Alamdar - 2022 - repositories.lib.utexas.edu
The magnetic tunnel junction is a memory device at the core of emerging magnetic random
access memory technology. As CMOS technology is approaching its physical limits …
access memory technology. As CMOS technology is approaching its physical limits …