Electron spin qubits formed by atoms in silicon have large (tens of millielectronvolts) orbital
energies and weak spin–orbit coupling, giving rise to isolated electron spin ground states …

The engineering of a compact qubit unit cell that embeds all quantum functionalities is
mandatory for large-scale integration. In addition, these functionalities should present the …

Substitutional donor atoms in silicon are promising qubits for quantum computation with
extremely long relaxation and dephasing times demonstrated. One of the critical challenges …

We present a theoretical analysis of the capacitance of a double quantum dot in the charge
and spin qubit configurations probed at high frequencies. We find that, in general, the total …

The strong atomistic spin–orbit coupling of holes makes single-shot spin readout
measurements difficult because it reduces the spin lifetimes. By integrating the charge …

Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates
for quantum information processing applications given their excellent coherence times …

Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum
computing. However, fast high-fidelity readout of charge and spin states, which is required …

We report the single-electron tunneling behaviour of a silicon nanobridge where the
effective island is a single As dopant atom. The device is a gated silicon nanobridge with a …

Individual impurity atoms in silicon can make superb individual qubits, but it remains an
immense challenge to build a multi-qubit processor: there is a basic conflict between …

We report the development of a high-sensitivity semiconductor charge sensor based on a
quantum dot coupled to a single lead designed to minimize the geometric requirements of a …