Structure, properties and applications of two‐dimensional hexagonal boron nitride
S Roy, X Zhang, AB Puthirath… - Advanced …, 2021 - Wiley Online Library
Hexagonal boron nitride (h‐BN) has emerged as a strong candidate for two‐dimensional
(2D) material owing to its exciting optoelectrical properties combined with mechanical …
(2D) material owing to its exciting optoelectrical properties combined with mechanical …
Making clean electrical contacts on 2D transition metal dichalcogenides
Y Wang, M Chhowalla - Nature Reviews Physics, 2022 - nature.com
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …
emerged as highly promising for new electronic technologies. However, a key challenge in …
Approaching the quantum limit in two-dimensional semiconductor contacts
The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
Unipolar barrier photodetectors based on van der Waals heterostructures
Unipolar barrier structures are used to suppress dark current in photodetectors by blocking
majority carriers. Designing unipolar barriers with conventional materials is challenging due …
majority carriers. Designing unipolar barriers with conventional materials is challenging due …
Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
Two-dimensional molybdenum disulfide (MoS2) is a potential alternative channel material to
silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high …
silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high …
Fermi level pinning dependent 2D semiconductor devices: challenges and prospects
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
Layer-structured anisotropic metal chalcogenides: recent advances in synthesis, modulation, and applications
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …
2D semiconductors for specific electronic applications: from device to system
The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …
electronic applications for complex scenarios have raised challenges in heterostructures …
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors
Y Wang, JC Kim, RJ Wu, J Martinez, X Song, J Yang… - Nature, 2019 - nature.com
As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …
contact resistance of the metal–semiconductor interface at the source and drain electrodes …
The road for 2D semiconductors in the silicon age
Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …