Van der Waals contact for two-dimensional transition metal dichalcogenides

L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …

Atomically thin hexagonal boron nitride and its heterostructures

J Zhang, B Tan, X Zhang, F Gao, Y Hu… - Advanced …, 2021 - Wiley Online Library
Atomically thin hexagonal boron nitride (h‐BN) is an emerging star of 2D materials. It is
taken as an optimal substrate for other 2D‐material‐based devices owing to its atomical …

Enhanced Performance of WS2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts

NAN Phan, H Noh, J Kim, Y Kim, H Kim, D Whang… - Small, 2022 - Wiley Online Library
Transition metal dichalcogenides (TMDs) are of great interest owing to their unique
properties. However, TMD materials face two major challenges that limit their practical …

One-dimensional edge contacts to a monolayer semiconductor

A Jain, Á Szabó, M Parzefall, E Bonvin, T Taniguchi… - Nano …, 2019 - ACS Publications
Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for
realizing electronic and optoelectronic functionalities. However, to date no scalable …

Two-dimensional MoSe2 nanosheets via liquid-phase exfoliation for high-performance room temperature NO2 gas sensors

X Chen, X Chen, Y Han, C Su, M Zeng, N Hu… - …, 2019 - iopscience.iop.org
Molybdenum selenide (MoSe 2) has drawn significant interest due to its typical
semiconductor properties. MoSe 2 is a relatively novel material in the field of gas sensors …

Encapsulation strategies on 2D materials for field effect transistors and photodetectors

W Huang, Y Zhang, M Song, B Wang, H Hou… - Chinese Chemical …, 2022 - Elsevier
Abstract Two-dimensional (2D) layered materials provide a promising alternative solution for
overcoming the scaling limits in conventional Si-based devices. However, practical …

Turn of the decade: versatility of 2D hexagonal boron nitride

AF Rigosi, AL Levy, MR Snure… - Journal of Physics …, 2021 - iopscience.iop.org
The era of two-dimensional (2D) materials, in its current form, truly began at the time that
graphene was first isolated just over 15 years ago. Shortly thereafter, the use of 2D …

Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors

G Pande, JY Siao, WL Chen, CJ Lee… - … applied materials & …, 2020 - ACS Publications
To explore the potential of field-effect transistors (FETs) based on monolayers (MLs) of the
two-dimensional semiconducting channel (SC) for spintronics, the two most important issues …

Origin of phonon-limited mobility in two-dimensional metal dichalcogenides

H Chang, H Wang, KK Song, M Zhong… - Journal of Physics …, 2021 - iopscience.iop.org
Metal dichalcogenides are novel two-dimensional (2D) semiconductors after the discovery
of graphene. In this article, phonon-limited mobility for six kinds of 2D semiconductors with …

Diode‐Like Selective Enhancement of Carrier Transport through Metal–Semiconductor Interface Decorated by Monolayer Boron Nitride

HN Jaiswal, M Liu, S Shahi, S Wei, J Lee… - Advanced …, 2020 - Wiley Online Library
Abstract 2D semiconductors such as monolayer molybdenum disulfide (MoS2) are
promising material candidates for next‐generation nanoelectronics. However, there are …