The goal of this article is to provide an overview of the state of knowledge regarding the
Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An …

Recent experimental and theoretical data on modification of the atomic and electronic
structures of the surface of different III–V semiconductors by electrolyte solutions are …

As the new display technology, Micro-LEDs are of the advantages of low power
consumption, high brightness, high resolution and fast response time. However, the strong …

The impact of wet treatment using an (NH4) 2S-alcohol solution on the interface state of the
p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet …

In an attempt to rationalize empirically developed GaSb device optimization using alcoholic
versus aqueous sulfide solutions, synchrotron radiation photoemission spectroscopy (SXPS) …

Gallium antimonide (GaSb) has been widely used for optoelectronic devices in recent years,
but the current transport mechanism at the metal-GaSb junction has not yet been clearly …

GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the
mid-infrared range. However, the existence of GaSb surface states has dramatically limited …

The effects of sulfur passivation on HfO 2/GaSb MOS capacitors (MOSCAPs) with
neutralized and unneutralized (NH 4) 2 S solutions of varied concentrations were …

Floating catalytic chemical vapor deposition technique was used for synthesizing carbon
nanotubes (CNTs) using ferrocene in benzene as the hydrocarbon source. The …

Abstract GaSb (1 0 0) samples were irradiated with 60 keV Ar+-ions at normal incidence for
fluences in the range of 7× 10 16 to 3× 10 18 ions cm− 2 at room temperature, showing …